Prof Colin Humphreys

From John Spence's Postdoc Time in Oxford to my Research on GaN and Graphene
Humphreys C
Microscopy and Microanalysis, Oxford University Press (Oup) vol. 28 (S1), 2736-2737.  
01-08-2022

Electron beam damage in titanium dioxide films
Saifullah MSM, Boothroyd CB, Botton GA and Humphreys CJ
 
05-01-2022

‘Nano-machining’ using a focused ion beam
Campbell LCI, Foord DT and Humphreys CJ
 
05-01-2022

Modelling of electron energy-loss spectroscopy detection limits
Natusch MKH, Botton GA, Humphreys CJ and Krivanek OL
 
05-01-2022

Martensitic transformation and characterisation of the structure of a NiAl - Ni3Al alloy
Pekarskaya E, Botton GA, Jones CN and Humphreys CJ
 
05-01-2022

Electron microscopy and analysis: the future
Humphreys C
 
05-01-2022

Quantification of the composition of silicon germanium / silicon structures by high-angle annular dark field imaging
Walther T and Humphreys CJ
 
05-01-2022

Observation of the mixed dynamic form factor in the Ag M4,5-edge
Hölzl M, Bottond GA, Nelhiebel M, Humphreys CJ, Jouffrey B, Grogger W, Hofer F and Schattschneider P
 
05-01-2022

The relationship between epitaxial growth, defect microstructure and luminescence in GaN
Tricker DM, Brown PD, Xin Y, Cheng TS, Foxon CT and Humphreys CJ
In Electron Microscopy and Analysis 1997, Taylor & Francis 429-432.  
05-01-2022

X-ray characterisation of the basal stacking fault densities of (112̄2) GaN
Pristovsek M, Frentrup M, Zhu T, Kusch G and Humphreys CJ
Crystengcomm, Royal Society of Chemistry vol. 23 (35), 6059-6069.  
03-08-2021

Mechanical Properties of Graphene
Sun YW, Papageorgiou D, Puech P, Proctor JE, Machon D, Bousige C, San-Miguel A, Humphreys C and Dunstan DJ
Applied Physics Reviews, Aip Publishing 
19-04-2021

Erratum: Unexpected softness of bilayer graphene and softening of A-A stacked graphene layers [Phys. Rev. B 101, 125421 (2020)]
Sun YW, Holec D, Gehringer D, Fenwick O, Dunstan DJ and Humphreys CJ
Physical Review B vol. 103 (11), 119901-119901.  
01-03-2021

Heteroepitaxial strains and interface structure of Ge–Si alloy layers on Si (100)
Kvam EP, Eaglesham DJ, Humphreys CJ, Maher DM, Bean JC and Eraser HL
In Microscopy of Semiconducting Materials, 1987, Taylor & Francis 165-168.  
31-01-2021

Nanomechanics of Graphene Oxide-bacteriophage based Self-assembled Porous Composites
Sun Y, Passaretti P, Hernandez I, Gonzalez J, Rodriguez F, Liu W, Dunstan DJ, Oppenheimer PG and Humphreys CJ
Scientific Reports, Nature Publishing Group vol. 10 
24-09-2020

Au-free recessed Ohmic contacts to AlGaN/GaN high electron mobility transistor: Study of etch chemistry and metal scheme
S N, Guiney I, Humphreys CJ, Sen P, Muralidharan R and Nath DN
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, American Vacuum Society vol. 38 (3) 
09-04-2020

Determination of carrier concentration and quantum efficiency in InGaN/GaN quantum wells using photomodulated reflectivity (Conference Presentation)
Halsall MP, Crowe I, Oliver R, Kappers MJ and Humphreys CJ
Gallium Nitride Materials and Devices XV. 
10-03-2020

A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias
Remesh N, Kumar S, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R and Nath DN
Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 217 (7) 
29-12-2019

InGaN as a substrate for AC photoelectrochemical imaging
Zhou B, Das A, Kappers M, Oliver R, Humphreys C and Krause S
Sensors, Mdpi 
11-10-2019

Effect of Size on the Luminescent Efficiency of Perovskite Nanocrystals
Griffiths JT, Rivarola FWR, Davis NJLK, Ahumada-Lazo R, Alanis JA, Parkinson P, Binks DJ, Fu WY, De La Pena F, Price MB, Howkins A, Boyd I, Humphreys CJ, Greenham NC and Ducati C
Acs Applied Energy Materials, American Chemical Society (Acs) vol. 2 (10), 6998-7004.  
07-10-2019

3D strain in 2D materials: to what extent is monolayer graphene graphite?
Sun YW, Liu W, Hernandez I, Gonzalez J, Rodriguez F, Dunstan DJ and Humphreys C
Physical Review Letters, American Physical Society vol. 123, 135501-135501.  
25-09-2019

Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates
Tang F, Zhu T, Fu W-Y, Oehler F, Zhang S, Griffiths JT, Humphreys C, Martin TL, Bagot PAJ, Moody MP, Patra SK, Schulz S, Dawson P, Church S, Jacobs J and Oliver RA
Journal of Applied Physics, Aip Publishing vol. 125 (22) 
11-06-2019

Optical and structural properties of dislocations in InGaN
Massabuau FC-P, Horton MK, Pearce E, Hammersley S, Chen P, Zielinski MS, Weatherley TFK, Divitini G, Edwards PR, Kappers MJ, McAleese C, Moram MA, Humphreys CJ, Dawson P and Oliver RA
Journal of Applied Physics, Aip Publishing vol. 125 (16) 
23-04-2019

Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength
Christian GM, Schulz S, Hammersley S, Kappers MJ, Frentrup M, Humphreys CJ, Oliver RA and Dawson P
Japanese Journal of Applied Physics vol. 58 
23-04-2019

Effect of humidity on the interlayer interaction of bilayer graphene
Qadir A, Sun YW, Liu W, Oppenheimer PG, Xu Y, Humphreys CJ and Dunstan DJ
Physical Review B vol. 99 (4) 
02-01-2019

Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model
Remesh N, Mohan N, Kumar S, Prabhu S, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R and Nath DN
Ieee Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (Ieee) vol. 66 (1), 613-618.  
07-12-2018

What is red? On the chromaticity of orange-red InGaN/GaN based LEDs
Robin Y, Pristovsek M, Amano H, Oehler F, Oliver RA and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 124 (18) 
09-11-2018

Photomodulated Reflectivity Measurement of Free-Carrier Dynamics in InGaN/GaN Quantum Wells
Halsall MP, Crowe IF, Mullins J, Oliver RA, Kappers MJ and Humphreys CJ
Acs Photonics, American Chemical Society (Acs) vol. 5 (11), 4437-4446.  
17-10-2018

Recombination from polar InGaN/GaN quantum well structures at high excitation carrier densities
Christian GM, Schulz S, Kappers MJ, Humphreys CJ, Oliver RA and Dawson P
Physical Review B, American Physical Society (Aps) vol. 98 (15) 
01-10-2018

Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells
Christian G, Kappers M, Massabuau F, Humphreys C, Oliver R and Dawson P
Materials, Mdpi vol. 11 (9) 
15-09-2018

Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN
Lee LY, Frentrup M, Kappers MJ, Oliver RA, Humphreys CJ and Wallis DJ
Journal of Applied Physics, Aip Publishing vol. 124 (10) 
11-09-2018

Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers
Choi FS, Griffiths JT, Ren C, Lee KB, Zaidi ZH, Houston PA, Guiney I, Humphreys CJ, Oliver RA and Wallis DJ
Journal of Applied Physics, Aip Publishing vol. 124 (5) 
03-08-2018

Response to letter from Wayne Osborn
Humphreys C and Waddington G
Astronomy and Geophysics vol. 59 (4) 
01-08-2018

Atomic Resolution Imaging of Dislocations in AlGaN and the Efficiency of UV LEDs
Humphreys CJ, Massabuau FC-P, Rhode SL, Horton MK, O’Hanlon TJ, Kovacs A, Zielinski MS, Kappers MJ, Dunin-Borkowski RE and Oliver RA
Microscopy and Microanalysis, Oxford University Press (Oup) vol. 24 (S1), 4-5.  
01-08-2018

Impact of stress in ICP‐CVD SiNx passivation films on the leakage current in AlGaN/GaN HEMTs
Cho S, Li X, Guiney I, Floros K, Hemakumara D, Wallis DJ, Humphreys C and Thayne IG
Electronics Letters, Institution of Engineering and Technology (Iet) vol. 54 (15), 947-949.  
01-07-2018

Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs
Zaidi ZH, Lee KB, Roberts JW, Guiney I, Qian H, Jiang S, Cheong JS, Li P, Wallis DJ, Humphreys CJ, Chalker PR and Houston PA
Journal of Applied Physics, Aip Publishing vol. 123 (18) 
14-05-2018

Effect of stacking faults on the photoluminescence spectrum of zincblende GaN
Church SA, Hammersley S, Mitchell PW, Kappers MJ, Lee LY, Massabuau F, Sahonta SL, Frentrup M, Shaw LJ, Wallis DJ, Humphreys CJ, Oliver RA, Binks DJ and Dawson P
Journal of Applied Physics, Aip Publishing vol. 123 (18) 
10-05-2018

Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures
Blenkhorn WE, Schulz S, Tanner DSP, Oliver RA, Kappers MJ, Humphreys CJ and Dawson P
Journal of Physics Condensed Matter, Iop Publishing vol. 30 (17) 
09-04-2018

Alloy fluctuations at dislocations in III-nitrides: identification and impact on optical properties
Massabuau FC-P, Chen P, Rhode SL, Horton MK, O'Hanlon TJ, Kovács A, Zielinski MS, Kappers MJ, Dunin-Borkowski RE, Humphreys CJ and Oliver RA
Gallium Nitride Materials and Devices XIII. vol. 10532 
23-02-2018

Illuminating theory on early solar eclipse
Humphreys C and Waddington G
Astronomy and Geophysics vol. 59 (1) 
01-02-2018

Moon village: show us the money
Nixon D, Humphreys C and Waddington G
Astronomy & Geophysics, Oxford University Press (Oup) vol. 59 (1), 1.8-1.8.  
01-02-2018

SEM doping contrast at a Si pn junction
Elliott SL, Broom RF and Humphreys CJ
 
18-01-2018

Energy-loss spectroscopy of GaN alloys and quantum wells
Keast VJ, Sharma N and Humphreys CJ
 
18-01-2018

Chemical mapping of InGaN/GaN LEDs
Sharma N, Kappers M, Barnard J, Vickers M and Humphreys C
 
18-01-2018

Effects of AIN and GaN low-temperature interlayers on the dislocation behaviour of AlGaN and GaN grown by MOCVD
Makaronidis G, McAleese C, Barnard JS and Humphreys CJ
 
10-01-2018

Electrostatic fields in InGaN/GaN single quantum wells and their variation with indium content, using off-axis holography and energy filtered TEM
Barnard JS, Kappers MJ, Thrush EJ and Humphreys CJ
 
10-01-2018

A comparative study of the structural properties of InGaN/GaN quantum wells determined by X-ray diffraction, high-angle annular dark-field imaging and energy-filtered TEM
Barnard JS, Vickers ME, Kappers MJ, Thrush EJ and Humphreys CJ
 
10-01-2018

Quantitative doping contrast profiling of p-n junctions in Si with the scanning electron microscope
Kazemian P, Schönjahn C and Humphreys CJ
 
10-01-2018

Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors
Tang F, Lee KB, Guiney I, Frentrup M, Barnard JS, Divitini G, Zaidi ZH, Martin TL, Bagot PA, Moody MP, Humphreys CJ, Houston PA, Oliver RA and Wallis DJ
Journal of Applied Physics, Aip Publishing vol. 123 (2) 
09-01-2018

Quantitative doping contrast profiling of p-n junctions in Si with the scanning electron microscope
Kazemian P, Schönjahn C and Humphreys CJ
In Microscopy of Semiconducting Materials 2003 593-596.  
01-01-2018

The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes
Hopkins MA, Allsopp DWE, Kappers MJ, Oliver RA and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 122 (23) 
21-12-2017

Degradation of in GaN/GaN Laser Diodes Investigated By Cross-Sectional Electron Beam Induced Current Imaging
Xiu H, Thrush EJ, Zhao L, Phillips A and Humphreys CJ
2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)., 38-44.  
01-11-2017

Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer
Kumar S, Gupta P, Guiney I, Humphreys CJ, Raghavan S, Muralidharan R and Nath DN
Ieee Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (Ieee) vol. 64 (12), 4868-4874.  
11-10-2017

Solar eclipse of 1207 BC helps to date pharaohs
Humphreys C and Waddington G
Astronomy & Geophysics, Oxford University Press (Oup) vol. 58 (5), 5.39-5.42.  
01-10-2017

Machine Learning Predicts Laboratory Earthquakes
Rouet-Leduc B, Hulbert C, Lubbers N, Barros K, Humphreys CJ and Johnson PA
Geophysical Research Letters vol. 44 (18), 9276-9282.  
28-09-2017

X-ray diffraction analysis of cubic zincblende III-nitrides
Frentrup M, Lee LY, Sahonta S-L, Kappers MJ, Massabuau F, Gupta P, Oliver RA, Humphreys CJ and Wallis DJ
Journal of Physics D, Iop Publishing vol. 50 (43) 
26-09-2017

Ahmed Zewail — A Towering Visionary
Humphreys C
In Personal and Scientific Reminiscences, World Scientific Publishing 137-139.  
04-08-2017

Automatized convergence of optoelectronic simulations using active machine learning
Rouet-Leduc B, Hulbert C, Barros K, Lookman T and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 111 (4) 
24-07-2017

Dual barrier InAlN/AlGaN/GaN‐on‐silicon high‐electron‐mobility transistors with Pt‐ and Ni‐based gate stacks
Floros K, Li X, Guiney I, Cho S, Hemakumara D, Wallis DJ, Wasige E, Moran DAJ, Humphreys CJ and Thayne IG
physica status solidi (a) – applications and materials science. vol. 214 (8) 
20-07-2017

Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties
Massabuau FC-P, Rhode SL, Horton MK, O’Hanlon TJ, Kovács A, Zielinski MS, Kappers MJ, Dunin-Borkowski RE, Humphreys CJ and Oliver RA
Nano Letters, American Chemical Society (Acs) vol. 17 (8), 4846-4852.  
18-07-2017

Passive Components Technology for THz-Monolithic Integrated Circuits (THz-MIC)
Eblabla A, Benakaprasad B, Li X, Wallis DJ, Guiney I, Humphreys C and Elgaid K
2017 18th International Radar Symposium (IRS)., 1-7.  
01-06-2017

Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth
Massabuau F, Kappers M, Humphreys C and Oliver R
physica status solidi (b). vol. 254 (8) 
22-05-2017

Structural impact on the nanoscale optical properties of InGaN core-shell nanorods
Griffiths JT, Ren CX, Coulon P-M, Le Boulbar ED, Bryce CG, Girgel I, Howkins A, Boyd I, Martin RW, Allsopp DWE, Shields PA, Humphreys CJ and Oliver RA
Applied Physics Letters, Aip Publishing vol. 110 (17) 
24-04-2017

Photoluminescence studies of cubic GaN epilayers
Church SA, Hammersley S, Mitchell PW, Kappers MJ, Sahonta SL, Frentrup M, Nilsson D, Ward PJ, Shaw LJ, Wallis DJ, Humphreys CJ, Oliver RA, Binks DJ and Dawson P
physica status solidi (b). vol. 254 (8) 
21-02-2017

All-GaN-Integrated Cascode Heterojunction Field Effect Transistors
Jiang S, Lee KB, Guiney I, Miaja PF, Zaidi ZH, Qian H, Wallis DJ, Forsyth AJ, Humphreys CJ and Houston PA
Ieee Transactions on Power Electronics, Institute of Electrical and Electronics Engineers (Ieee) vol. 32 (11), 8743-8750.  
17-02-2017

Single-step manufacturing process for the production of graphene-V/III LED heterostructures
Guiney I, Thomas S and Humphreys CJ
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI. vol. 10124 
16-02-2017

The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem
Humphreys CJ, Griffiths JT, Tang F, Oehler F, Findlay SD, Zheng C, Etheridge J, Martin TL, Bagot PAJ, Moody MP, Sutherland D, Dawson P, Schulz S, Zhang S, Fu WY, Zhu T, Kappers MJ and Oliver RA
Ultramicroscopy, Elsevier vol. 176, 93-98.  
03-02-2017

Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth
Qian H, Lee KB, Vajargah SH, Novikov SV, Guiney I, Zaidi ZH, Jiang S, Wallis DJ, Foxon CT, Humphreys CJ and Houston PA
Journal of Crystal Growth, Elsevier vol. 459, 185-188.  
01-02-2017

Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001)
Kim J-Y, Ionescu A, Mansell R, Farrer I, Oehler F, Kinane CJ, Cooper JFK, Steinke N-J, Langridge S, Stankiewicz R, Humphreys CJ, Cowburn RP, Holmes SN and Barnes CHW
Journal of Applied Physics, Aip Publishing vol. 121 (4) 
24-01-2017

Evolution of the m‑Plane Quantum Well Morphology and Composition within a GaN/InGaN Core–Shell Structure
Coulon P-M, Vajargah SH, Bao A, Edwards PR, Le Boulbar ED, Girgel I, Martin RW, Humphreys CJ, Oliver RA, Allsopp DWE and Shields PA
Crystal Growth & Design, American Chemical Society (Acs) vol. 17 (2), 474-482.  
11-01-2017

X‐ray reflectivity method for the characterization of InGaN/GaN quantum well interface
Massabuau F, Piot N, Frentrup M, Wang X, Avenas Q, Kappers M, Humphreys C and Oliver R
physica status solidi (b). vol. 254 (8) 
06-01-2017

Carrier localization in the vicinity of dislocations in InGaN
Massabuau FC-P, Chen P, Horton MK, Rhode SL, Ren CX, O'Hanlon TJ, Kovács A, Kappers MJ, Humphreys CJ, Dunin-Borkowski RE and Oliver RA
Journal of Applied Physics, Aip Publishing vol. 121 (1) 
03-01-2017

Preventing cracking in the growth of low-cost GaN LEDs on large-area Si
Humphreys CJ
ICF 2017 - 14th International Conference on Fracture. vol. 2, 1280-1282.  
01-01-2017

Perspectives on Electronic and Photonic Materials
Smeeton T and Humphreys C
In Springer Handbook of Electronic and Photonic Materials, Springer Nature 1-1.  
01-01-2017

Impact of high energy electrons on nitrides for nanocathodoluminescence
Griffiths J, Zhang S, Lhuillier J, Zhu D, Wallis D, Howkins A, Boyd I, Stowe D, Humphreys C and Oliver R
In European Microscopy Congress 2016: Proceedings, Wiley 1044-1045.  
20-12-2016

Nanocathodoluminescence reveals the mitigation of the Stark shift in InGaN quantum wells by silicon doping
Griffiths J, Zhang S, Rouet‐Leduc B, Fu WY, Zhu D, Wallis D, Howkins A, Boyd I, Stowe D, Humphreys C and Oliver R
In European Microscopy Congress 2016: Proceedings, Wiley 562-563.  
20-12-2016

Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence
Zhu T, Gachet D, Tang F, Fu WY, Oehler F, Kappers MJ, Dawson P, Humphreys CJ and Oliver RA
Applied Physics Letters, Aip Publishing vol. 109 (23) 
05-12-2016

Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source
Novikov SV, Staddon CR, Sahonta S-L, Oliver RA, Humphreys CJ and Foxon CT
Journal of Crystal Growth, Elsevier vol. 456, 151-154.  
01-12-2016

Dielectric response of wurtzite gallium nitride in the terahertz frequency range
Hibberd MT, Frey V, Spencer BF, Mitchell PW, Dawson P, Kappers MJ, Oliver RA, Humphreys CJ and Graham DM
Solid State Communications, Elsevier vol. 247, 68-71.  
01-12-2016

Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells
Schulz S, Tanner DSP, O'Reilly EP, A. M, Tang F, Griffiths JT, Oehler F, Kappers MJ, Oliver RA, Humphreys CJ, Sutherland D, Davies MJ and Dawson P
Applied Physics Letters, Aip Publishing vol. 109 (22) 
28-11-2016

A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates.
Kundys D, Sutherland D, Davies MJ, Oehler F, Griffiths J, Dawson P, Kappers MJ, Humphreys CJ, Schulz S, Tang F and Oliver RA
Sci Technol Adv Mater vol. 17 (1), 736-743.  
10-11-2016

Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold
Griffiths JT, Zhang S, Lhuillier J, Zhu D, Fu WY, Howkins A, Boyd I, Stowe D, Wallis DJ, Humphreys CJ and Oliver RA
Journal of Applied Physics, Aip Publishing vol. 120 (16) 
28-10-2016

Terahertz Microstrip Elevated Stack Antenna Technology on GaN-on-Low Resistivity Silicon Substrates for TMIC
Benakaprasad B, Eblabla A, Li X, Elgaid K, Wallis DJ, Guiney I and Humphreys C
2016 46th European Microwave Conference (EuMC)., 413-416.  
01-10-2016

Determination of axial and lateral exciton diffusion length in GaN by electron energy dependent cathodoluminescence
Hocker M, Maier P, Jerg L, Tischer I, Neusser G, Kranz C, Pristovsek M, Humphreys CJ, Leute RAR, Heinz D, Rettig O, Scholz F and Thonke K
Journal of Applied Physics, Aip Publishing vol. 120 (8) 
23-08-2016

High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer
Muhammed MM, Roldan MA, Yamashita Y, Sahonta S-L, Ajia IA, Iizuka K, Kuramata A, Humphreys CJ and Roqan IS
Scientific Reports, Springer Nature vol. 6 (1) 
14-07-2016

Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0)
Pristovsek M, Han Y, Zhu T, Oehler F, Tang F, Oliver RA, Humphreys CJ, Tytko D, Choi P-P, Raabe D, Brunner F and Weyers M
Semiconductor Science and Technology, Iop Publishing vol. 31 (8) 
12-07-2016

Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes
Presa S, Maaskant PP, Kappers MJ, Humphreys CJ and Corbett B
Aip Advances, Aip Publishing vol. 6 (7) 
01-07-2016

Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells
Davies MJ, Dawson P, Hammersley S, Zhu T, Kappers MJ, Humphreys CJ and Oliver RA
Applied Physics Letters, Aip Publishing vol. 108 (25) 
20-06-2016

Scalable semipolar gallium nitride templates for high-speed LEDs
Corbett B, Lymperakis L, Scholz F, Humphreys C, Brunner F and Meyer T
Spie Newsroom, Spie, The International Society For Optics and Photonics 
03-06-2016

Terahertz cyclotron resonance spectroscopy of an AlGaN/GaN heterostructure using a high-field pulsed magnet and an asynchronous optical sampling technique
Spencer BF, Smith WF, Hibberd MT, Dawson P, Beck M, Bartels A, Guiney I, Humphreys CJ and Graham DM
Applied Physics Letters, Aip Publishing vol. 108 (21) 
23-05-2016

The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells
Dawson P, Schulz S, Oliver RA, Kappers MJ and Humphreys CJ
Journal of Applied Physics vol. 119 (18) 
14-05-2016

Characterization of p-GaN1−x As x /n-GaN PN junction diodes
Qian H, Lee KB, Vajargah SH, Novikov SV, Guiney I, Zhang S, Zaidi ZH, Jiang S, Wallis DJ, Foxon CT, Humphreys CJ and Houston PA
Semiconductor Science and Technology, Iop Publishing vol. 31 (6) 
12-05-2016

The microstructure of non-polar a-plane (11 2 ¯0) InGaN quantum wells
Griffiths JT, Oehler F, Tang F, Zhang S, Fu WY, Zhu T, Findlay SD, Zheng C, Etheridge J, Martin TL, Bagot PAJ, Moody MP, Sutherland D, Dawson P, Kappers MJ, Humphreys CJ and Oliver RA
Journal of Applied Physics, Aip Publishing vol. 119 (17) 
02-05-2016

Toward defect‐free semi‐polar GaN templates on pre‐structured sapphire (Phys. Status Solidi B 5/2016)
Han Y, Caliebe M, Hage F, Ramasse Q, Pristovsek M, Zhu T, Scholz F and Humphreys C
Physica Status Solidi (B), Wiley vol. 253 (5), 1024-1024.  
01-05-2016

Optimisation of GaN LEDs and the reduction of efficiency droop using active machine learning
Rouet-Leduc B, Barros K, Lookman T and Humphreys CJ
Scientific Reports, Springer Nature vol. 6 (1) 
26-04-2016

Comparative study of (0001) and InGaN based light emitting diodes
Pristovsek M, Humphreys CJ, Bauer S, Knab M, Thonke K, Kozlowski G, O’Mahony D, Maaskant P and Corbett B
Japanese Journal of Applied Physics. vol. 55 (5S) 
15-04-2016

Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures
Hammersley S, Kappers MJ, Massabuau FC, Sahonta S, Dawson P, Oliver RA and Humphreys CJ
Physica Status Solidi (C) 
14-04-2016

Impact of Buffer Charge on the Reliability of Carbon Doped AIGaN/GaN-on-Si HEMTs
Chatterjee I, Uren MJ, Pooth A, Karboyan S, Martin-Horcajo S, Kuball M, Lee KB, Zaidi Z, Houston PA, Wallis DJ, Guiney I and Humphreys CJ
2016 IEEE International Reliability Physics Symposium (IRPS). 
01-04-2016

Influence of trench period and depth on MOVPE grown (112¯2) GaN on patterned r-plane sapphire substrates.
Caliebe M, Tandukar S, Cheng Z, Hocker M, Han Y, Meisch T, Heinz D, Huber F, Bauer S, Plettl A, Humphreys C, Thonke K and Scholz F
Journal of Crystal Growth, Elsevier vol. 440, 69-75.  
01-04-2016

Subthreshold Mobility in AlGaN/GaN HEMTs
Waller WM, Uren MJ, Lee KB, Houston PA, Wallis DJ, Guiney I, Humphreys CJ, Pandey S, Sonsky J and Kuball M
Ieee Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (Ieee) vol. 63 (5), 1861-1865.  
30-03-2016

Structural and Optical Emission Uniformity of m‑Plane InGaN Single Quantum Wells in Core–Shell Nanorods
Le Boulbar ED, Edwards PR, Vajargah SH, Griffiths I, Gîrgel I, Coulon P-M, Cherns D, Martin RW, Humphreys CJ, Bowen CR, Allsopp DWE and Shields PA
Crystal Growth & Design, American Chemical Society (Acs) vol. 16 (4), 1907-1916.  
23-03-2016

Dislocation core structures in (0001) InGaN
Rhode SL, Horton MK, Sahonta S-L, Kappers MJ, Haigh SJ, Pennycook TJ, McAleese C, Humphreys CJ, Dusane RO and Moram MA
Journal of Applied Physics, Aip Publishing vol. 119 (10) 
09-03-2016

Development of semipolar (11-22) LEDs on GaN templates
Corbett B, Quan Z, Dinh DV, Kozlowski G, O'Mahony D, Akhter M, Schulz S, Parbrook P, Maaskant P, Caliebe M, Hocker M, Thonke K, Scholz F, Pristovsek M, Han Y, Humphreys CJ, Brunner F, Weyers M, Meyer TM and Lymperakis L
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX. vol. 9768 
08-03-2016

Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes
Gîrgel I, Edwards PR, Le Boulbar E, Coulon P-M, Sahonta S-L, Allsopp DWE, Martin RW, Humphreys CJ and Shields PA
Journal of Nanophotonics. vol. 10 (1), 016010-016010.  
07-03-2016

Molecular beam epitaxy of free‐standing bulk wurtzite AlxGa1‐xN layers using a highly efficient RF plasma source
Novikov SV, Staddon CR, Sahonta S, Oliver RA, Humphreys CJ and Foxon CT
physica status solidi (c). vol. 13 (5‐6), 217-220.  
25-02-2016

Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs
Hammersley S, Dawson P, Kappers MJ, Massabuau FC, Frentrup M, Oliver RA and Humphreys CJ
physica status solidi (c). vol. 13 (5‐6), 262-265.  
17-02-2016

Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics
Roberts JW, Chalker PR, Lee KB, Houston PA, Cho SJ, Thayne IG, Guiney I, Wallis D and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 108 (7) 
15-02-2016

A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers
Davies MJ, Hammersley S, Massabuau FC-P, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 119 (5) 
05-02-2016

Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures
Hammersley S, Kappers MJ, Massabuau FC, Sahonta S, Dawson P, Oliver RA and Humphreys CJ
physica status solidi (c). vol. 13 (5‐6), 209-213.  
03-02-2016

Investigating efficiency droop in InGaN/GaN quantum well structures using ultrafast time‐resolved terahertz and photoluminescence spectroscopy
Dunn A, Spencer BF, Hardman SJO, Graham DM, Hammersley S, Davies MJ, Dawson P, Kappers MJ, Oliver RA and Humphreys CJ
physica status solidi (c). vol. 13 (5‐6), 252-255.  
03-02-2016

Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells
Christian GM, Hammersley S, Davies MJ, Dawson P, Kappers MJ, Massabuau FC, Oliver RA and Humphreys CJ
physica status solidi (c). vol. 13 (5‐6), 248-251.  
27-01-2016

Origins of hillock defects on GaN templates grown on Si(111)
Han Y, Zhu D, Zhu T, Humphreys CJ and Wallis DJ
Journal of Crystal Growth, Elsevier vol. 434, 123-127.  
01-01-2016

n-Type conductivity bound by the growth temperature: the case of Al 0.72 Ga 0.28 N highly doped by silicon
Kakanakova-Georgieva A, Sahonta S-L, Nilsson D, Trinh XT, Son NT, Janzén E and Humphreys CJ
Journal of Materials Chemistry C, Royal Society of Chemistry (Rsc) vol. 4 (35), 8291-8296.  
01-01-2016

Solid-State Lighting Based on Light Emitting Diode Technology
Zhu D and Humphreys CJ
In Optics in Our Time, Springer Nature 87-118.  
01-01-2016

Modelling the Closely-Coupled Cascode Switching Process
Miaja PF, Jiang S, Lee KB, Guiney I, Wallis DJ, Humphreys CJ, Houston PA and Forsyth AJ
2016 IEEE Energy Conversion Congress and Exposition (ECCE)., 1-8.  
01-01-2016

Terahertz Magnetospectroscopy Studies of an AlGaN/GaN Heterostructure
Spencer BF, Hibberd MT, Smith WF, Dawson P, Beck M, Bartels A, Guiney I, Humphreys CJ and Graham DM
2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)., 1-2.  
01-01-2016

Transfer printed multi-color integrated devices for visible light communication applications
Rae K, Xie E, Foucher C, Guilhabert B, Ferriera R, Zhu D, Wallis DJ, Humphreys CJ, Oliver RA, Gu E, Laurand N and Dawson MD
Light, Energy and the Environment. 
01-01-2016

Terahertz Monolithic Integrated Circuits (TMICs) Array Antenna Technology on GaN-on-Low Resistivity Silicon Substrates
Benakaprasad B, Eblabla A, Li X, Thayne I, Wallis DJ, Guiney I, Humphreys C and Elgaid K
2016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz)., 1-2.  
01-01-2016

Terahertz magnetospectroscopy studies of an AlGaN/GaN heterostructure
Spencer BF, Hibberd MT, Smith WF, Dawson P, Beck M, Bartels A, Guiney I, Humphreys CJ and Graham DM
Conference on Lasers and Electro-Optics. 
01-01-2016

Dislocation core structures in Si-doped GaN
Rhode SL, Horton MK, Fu WY, Sahonta S-L, Kappers MJ, Pennycook TJ, Humphreys CJ, Dusane RO and Moram MA
Applied Physics Letters, Aip Publishing vol. 107 (24) 
14-12-2015

Toward defect‐free semi‐polar GaN templates on pre‐structured sapphire
Han Y, Caliebe M, Hage F, Ramasse Q, Pristovsek M, Zhu T, Scholz F and Humphreys C
Physica Status Solidi (B), Wiley vol. 253 (5), 834-839.  
12-12-2015

Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory
Schulz S, Tanner DP, O'Reilly EP, A. M, Martin TL, Bagot PAJ, Moody MP, Tang F, Griffiths JT, Oehler F, Kappers MJ, Oliver RA, Humphreys CJ, Sutherland D, Davies MJ and Dawson P
Physical Review B, American Physical Society (Aps) vol. 92 (23) 
01-12-2015

Difference in linear polarization of biaxially strained InxGa1−xN alloys on nonpolar a-plane and m-plane GaN
Zhang S, Cui Y, Griffiths JT, Fu WY, Freysoldt C, Neugebauer J, Humphreys CJ and Oliver RA
Physical Review B, American Physical Society (Aps) vol. 92 (24) 
01-12-2015

A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
Cho SJ, Roberts JW, Guiney I, Li X, Ternent G, Floros K, Humphreys CJ, Chalker PR and Thayne IG
Microelectronic Engineering. vol. 147, 277-280.  
01-11-2015

Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping
Griffiths JT, Zhang S, Rouet-Leduc B, Fu WY, Bao A, Zhu D, Wallis DJ, Howkins A, Boyd I, Stowe D, Kappers MJ, Humphreys CJ and Oliver RA
Nano Letters, American Chemical Society (Acs) vol. 15 (11), 7639-7643.  
22-10-2015

Integrated Dual-Color Ingan Light-Emitting Diode Array Through Transfer Printing
Rae K, Xie EY, Trindade AJ, Guilhabert B, Ferreira R, McKendry JJD, Zhu D, Laurand N, Gu E, Watson IM, Humphreys CJ, Wallis DJ and Dawson MD
2015 IEEE Photonics Conference (IPC)., 390-391.  
01-10-2015

Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes
Meneghini M, Zhu D, Humphreys CJ, Berti M, Gasparotto A, Cesca T, Vinattieri A, Bogani F, Meneghesso G and Zanoni E
Aip Advances, Aip Publishing vol. 5 (10) 
01-10-2015

Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions
Hammersley S, Kappers MJ, Massabuau FC-P, Sahonta S-L, Dawson P, Oliver RA and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 107 (13) 
28-09-2015

Optimizing GaN () hetero‐epitaxial templates grown on () sapphire
Pristovsek M, Frentrup M, Han Y and Humphreys CJ
Physica Status Solidi (B), Wiley vol. 253 (1), 61-66.  
31-08-2015

Enhancement mode operation in AlInN/GaN (MIS)HEMTs on Si substrates using a fluorine implant
Zaidi ZH, Lee KB, Guiney I, Qian H, Jiang S, Wallis DJ, Humphreys CJ and Houston PA
Semiconductor Science and Technology, Iop Publishing vol. 30 (10) 
18-08-2015

Growth and coalescence studies of oriented GaN on pre‐structured sapphire substrates using marker layers
Caliebe M, Han Y, Hocker M, Meisch T, Humphreys C, Thonke K and Scholz F
Physica Status Solidi (B), Wiley vol. 253 (1), 46-53.  
14-08-2015

Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs
Waller WM, Karboyan S, Uren MJ, Lee KB, Houston PA, Wallis DJ, Guiney I, Humphreys CJ and Kuball M
Ieee Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (Ieee) vol. 62 (8), 2464-2469.  
07-07-2015

Heterogeneous integration of gallium nitride light-emitting diodes on diamond and silica by transfer printing
Trindade AJ, Guilhabert B, Xie EY, Ferreira R, McKendry JJD, Zhu D, Laurand N, Gu E, Wallis DJ, Watson IM, Humphreys CJ and Dawson MD
Optics Express, Optica Publishing Group vol. 23 (7), 9329-9338.  
02-04-2015

Origin of faceted surface hillocks on semi-polar (112¯2) GaN templates grown on pre-structured sapphire
Han Y, Caliebe M, Kappers M, Scholz F, Pristovsek M and Humphreys C
Journal of Crystal Growth, Elsevier vol. 415, 170-175.  
01-04-2015

Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes
Wallace MJ, Edwards PR, Kappers MJ, Hopkins MA, Oehler F, Sivaraya S, Oliver RA, Humphreys CJ, Allsopp DWE and Martin RW
Journal of Applied Physics, Aip Publishing vol. 117 (11) 
21-03-2015

SCM and SIMS investigations of unintentional doping in III‐nitrides
Kappers MJ, Zhu T, Sahonta S, Humphreys CJ and Oliver RA
physica status solidi (c). vol. 12 (4-5), 403-407.  
18-03-2015

Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 V
Lee KB, Guiney I, Jiang S, Zaidi ZH, Qian H, Wallis DJ, Uren MJ, Kuball M, Humphreys CJ and Houston PA
Applied Physics Express, Iop Publishing vol. 8 (3) 
19-02-2015

Segregation of In to Dislocations in InGaN
Horton MK, Rhode S, Sahonta S-L, Kappers MJ, Haigh SJ, Pennycook TJ, Humphreys CJ, Dusane RO and Moram MA
Nano Letters, American Chemical Society (Acs) vol. 15 (2), 923-930.  
21-01-2015

Optical studies of non‐polar m‐plane () InGaN/GaN multi‐quantum wells grown on freestanding bulk GaN
Sutherland D, Zhu T, Griffiths JT, Tang F, Dawson P, Kundys D, Oehler F, Kappers MJ, Humphreys CJ and Oliver RA
physica status solidi (b). vol. 252 (5), 965-970.  
20-01-2015

Carrier distributions in InGaN/GaN light‐emitting diodes
Hammersley S, Davies MJ, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ
Physica Status Solidi (B), Wiley vol. 252 (5), 890-894.  
29-12-2014

Sulfuric acid and hydrogen peroxide surface passivation effects on AlGaN/GaN high electron mobility transistors
Zaidi ZH, Lee KB, Guiney I, Qian H, Jiang S, Wallis DJ, Humphreys CJ and Houston PA
Journal of Applied Physics, Aip Publishing vol. 116 (24) 
22-12-2014

Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures
Massabuau FC, Davies MJ, Blenkhorn WE, Hammersley S, Kappers MJ, Humphreys CJ, Dawson P and Oliver RA
Physica Status Solidi (B), Wiley vol. 252 (5), 928-935.  
19-12-2014

Low defect large area semi‐polar (112) GaN grown on patterned (113) silicon
Pristovsek M, Han Y, Zhu T, Frentrup M, Kappers MJ, Humphreys CJ, Kozlowski G, Maaskant P and Corbett B
physica status solidi (b). vol. 252 (5), 1104-1108.  
05-12-2014

Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method
Griffiths JT, Zhu T, Oehler F, Emery RM, Fu WY, Reid BPL, Taylor RA, Kappers MJ, Humphreys CJ and Oliver RA
Apl Materials, Aip Publishing vol. 2 (12) 
01-12-2014

Evaluation of growth methods for the heteroepitaxy of non-polar (112¯0) GAN on sapphire by MOVPE
Oehler F, Sutherland D, Zhu T, Emery R, Badcock TJ, Kappers MJ, Humphreys CJ, Dawson P and Oliver RA
Journal of Crystal Growth, Elsevier vol. 408, 32-41.  
01-12-2014

A study of the inclusion of prelayers in InGaN/GaN single‐ and multiple‐quantum‐well structures
Davies MJ, Dawson P, Massabuau FC, Le Fol A, Oliver RA, Kappers MJ and Humphreys CJ
Physica Status Solidi (B), Wiley vol. 252 (5), 866-872.  
14-11-2014

Comparative study of polar and semipolar ( 11 2 ¯ 2 ) InGaN layers grown by metalorganic vapour phase epitaxy
Dinh DV, Oehler F, Zubialevich VZ, Kappers MJ, Alam SN, Caliebe M, Scholtz F, Humphreys CJ and Parbrook PJ
Journal of Applied Physics, Aip Publishing vol. 116 (15) 
16-10-2014

Capillary-Bonding of Thin LEDs onto Non-Native Substrates by Transfer-Printing
Trindade AJ, Guilhabert B, Zhu D, Laurand N, Gu E, Watson IM, Humphreys CJ, Wallis DJ and Dawson MD
2014 IEEE Photonics Conference., 504-505.  
01-10-2014

Direct Observation of Depth-Dependent Atomic Displacements Associated with Dislocations in Gallium Nitride
Lozano JG, Yang H, Guerrero-Lebrero MP, D'Alfonso AJ, Yasuhara A, Okunishi E, Zhang S, Humphreys CJ, Allen LJ, Galindo PL, Hirsch PB and Nellist PD
Physical Review Letters, American Physical Society (Aps) vol. 113 (13) 
24-09-2014

The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem
Massabuau FC-P, Davies MJ, Oehler F, Pamenter SK, Thrush EJ, Kappers MJ, Kovács A, Williams T, Hopkins MA, Humphreys CJ, Dawson P, Dunin-Borkowski RE, Etheridge J, Allsopp DWE and Oliver RA
Applied Physics Letters, Aip Publishing vol. 105 (11) 
15-09-2014

Structure and strain relaxation effects of defects in InxGa1−xN epilayers
Rhode SL, Fu WY, Moram MA, Massabuau FC-P, Kappers MJ, McAleese C, Oehler F, Humphreys CJ, Dusane RO and Sahonta S
Journal of Applied Physics, Aip Publishing vol. 116 (10) 
10-09-2014

The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures
Davies MJ, Dawson P, Massabuau FC-P, Oliver RA, Kappers MJ and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 105 (9) 
01-09-2014

Electron Channeling Contrast Imaging of Defects in III-Nitride Semiconductors
Trager-Cowan C, Naresh-Kumar G, Allehiani N, Kraeusel S, Hourahine B, Vespucci S, Thomson D, Bruckbauer J, Kusch G, Edwards PR, Martin RW, Mauder C, Day AP, Winkelmann A, Vilalta-Clemente A, Wilkinson AJ, Parbrook PJ, Kappers MJ, Moram MA, Oliver RA, et al.
Microscopy and Microanalysis. vol. 20 (S3), 1024-1025.  
01-08-2014

How Cutting-Edge Atomic Resolution Microscopy Can Help to Solve Some of the World's Energy Problems
Humphreys C
Microscopy and Microanalysis, Oxford University Press (Oup) vol. 20 (S3), xcvii-c.  
01-08-2014

How Cutting-Edge Atomic Resolution Microscopy Can Help to Solve Some of the World’s Energy Problems
Humphreys C and Ford BJ
Microscopy and Microanalysis, Oxford University Press (Oup) vol. 20 (S2), 11-14.  
29-07-2014

Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode
Wallace MJ, Edwards PR, Kappers MJ, Hopkins MA, Oehler F, Sivaraya S, Allsopp DWE, Oliver RA, Humphreys CJ and Martin RW
Journal of Applied Physics, Aip Publishing vol. 116 (3) 
18-07-2014

Investigation of the GaN-on-GaAs interface for vertical power device applications
Möreke J, Uren MJ, Novikov SV, Foxon CT, Vajargah SH, Wallis DJ, Humphreys CJ, Haigh SJ, Al-Khalidi A, Wasige E, Thayne I and Kuball M
Journal of Applied Physics, Aip Publishing vol. 116 (1) 
03-07-2014

A dissociation mechanism for the [a+c] dislocation in GaN
Nellist PD, Hirsch PB, Rhode S, Horton MK, Lozano JG, Yasuhara A, Okunishi E, Zhang S, Sahonta S-L, Kappers MJ, Humphreys CJ and Moram MA
Journal of Physics Conference Series. vol. 522 (1) 
11-06-2014

Observation of depth-dependent atomic displacements related to dislocations in GaN by optical sectioning in the STEM
Lozano JG, Guerrero-Lebrero MP, Yasuhara A, Okinishi E, Zhang S, Humphreys CJ, Galindo PL, Hirsch PB and Nellist PD
Journal of Physics Conference Series. vol. 522 (1) 
11-06-2014

Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues
Calciati M, Goano M, Bertazzi F, Vallone M, Zhou X, Ghione G, Meneghini M, Meneghesso G, Zanoni E, Bellotti E, Verzellesi G, Zhu D and Humphreys C
Aip Advances, Aip Publishing vol. 4 (6) 
01-06-2014

Dislocation-related trap levels in nitride-based light emitting diodes
Venturi G, Castaldini A, Cavallini A, Meneghini M, Zanoni E, Zhu D and Humphreys C
Applied Physics Letters, Aip Publishing vol. 104 (21) 
26-05-2014

Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire
Kundys D, Schulz S, Oehler F, Sutherland D, Badcock TJ, Dawson P, Kappers MJ, Oliver RA and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 115 (11) 
21-03-2014

Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells
Badcock TJ, Dawson P, Davies MJ, Kappers MJ, Massabuau FC-P, Oehler F, Oliver RA and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 115 (11) 
18-03-2014

Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures
Bruckbauer J, Edwards PR, Sahonta S-L, Massabuau FC-P, Kappers MJ, Humphreys CJ, Oliver RA and Martin RW
Journal of Physics D, Iop Publishing vol. 47 (13) 
11-03-2014

Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing
Vinattieri A, Batignani F, Bogani F, Meneghini M, Meneghesso G, Zanoni E, Zhu D and Humphreys CJ
AIP Conference Proceedings. vol. 1583 (1), 282-286.  
21-02-2014

Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices
Mutta GR, Venturi G, Castaldini A, Cavallini A, Meneghini M, Zanoni E, Meneghesso G, Zhu D and Humphreys C
AIP Conference Proceedings. vol. 1583 (1), 315-318.  
21-02-2014

The impact of growth parameters on trench defects in InGaN/GaN quantum wells
Massabuau FC, Le Fol A, Pamenter SK, Oehler F, Kappers MJ, Humphreys CJ and Oliver RA
Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 211 (4), 740-743.  
14-02-2014

High excitation density recombination dynamics in InGaN/GaN quantum well structures in the droop regime
Davies MJ, Badcock TJ, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ
physica status solidi (c). vol. 11 (3‐4), 694-697.  
01-02-2014

An investigation into defect reduction techniques for growth of non‐polar GaN on sapphire
Sutherland D, Oehler F, Zhu T, Griffiths JT, Badcock TJ, Dawson P, Emery RM, Kappers MJ, Humphreys CJ and Oliver RA
physica status solidi (c). vol. 11 (3‐4), 541-544.  
01-02-2014

Dynamics of carrier redistribution processes in InGaN/GaN quantum well structures
Badcock TJ, Dawson P, Davies MJ, Oliver RA, Kappers MJ and Humphreys CJ
physica status solidi (c). vol. 11 (3‐4), 738-741.  
28-01-2014

Effects of an InGaN prelayer on the properties of InGaN/GaN quantum well structures
Davies MJ, Massabuau FC, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ
physica status solidi (c). vol. 11 (3‐4), 710-713.  
28-01-2014

The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells
Davies MJ, Dawson P, Massabuau FC, Oehler F, Oliver RA, Kappers MJ, Badcock TJ and Humphreys CJ
Physica Status Solidi (C), Wiley vol. 11 (3‐4), 750-753.  
28-01-2014

Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates
Tian P, McKendry JJD, Gong Z, Zhang S, Watson S, Zhu D, Watson IM, Gu E, Kelly AE, Humphreys CJ and Dawson MD
Journal of Applied Physics, Aip Publishing vol. 115 (3) 
21-01-2014

The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method
Massabuau FC-P, Tartan CC, Traynier R, Blenkhorn WE, Kappers MJ, Dawson P, Humphreys CJ and Oliver RA
Journal of Crystal Growth, Elsevier vol. 386, 88-93.  
01-01-2014

Elastic constants and critical thicknesses of ScGaN and ScAlN
Zhang S, Fu WY, Holec D, Humphreys CJ and Moram MA
Journal of Applied Physics, Aip Publishing vol. 114 (24) 
28-12-2013

Interfacial Structure and Chemistry of GaN on Ge(111)
Zhang S, Zhang Y, Cui Y, Freysoldt C, Neugebauer J, Lieten RR, Barnard JS and Humphreys CJ
Physical Review Letters, American Physical Society (Aps) vol. 111 (25) 
16-12-2013

Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates
Trindade AJ, Guilhabert B, Massoubre D, Zhu D, Laurand N, Gu E, Watson IM, Humphreys CJ and Dawson MD
Applied Physics Letters, Aip Publishing vol. 103 (25) 
16-12-2013

Towards a better understanding of trench defects in InGaN/GaN quantum wells
Massabuau FC-P, Trinh-Xuan L, Lodié D, Sahonta S-L, Rhode S, Thrush EJ, Oehler F, Kappers MJ, Humphreys CJ and Oliver RA
Journal of Physics Conference Series. vol. 471 (1) 
29-11-2013

Low-cost high-efficiency GaN LED on large-area si substrate
Zhu D and Humphreys CJ
2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013., 269-272.  
15-11-2013

Coincident Electron Channeling and Cathodoluminescence Studies of Threading Dislocations in GaN
Naresh-Kumar G, Bruckbauer J, Edwards PR, Kraeusel S, Hourahine B, Martin RW, Kappers MJ, Moram MA, Lovelock S, Oliver RA, Humphreys CJ and Trager-Cowan C
Microscopy and Microanalysis, Oxford University Press (Oup) vol. 20 (1), 55-60.  
12-11-2013

Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges
Oehler F, Zhu T, Rhode S, Kappers MJ, Humphreys CJ and Oliver RA
Journal of Crystal Growth, Elsevier vol. 383, 12-18.  
01-11-2013

Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides
Zhang S, Holec D, Fu WY, Humphreys CJ and Moram MA
Journal of Applied Physics, Aip Publishing vol. 114 (13) 
04-10-2013

Prospects of III-nitride optoelectronics grown on Si
Zhu D, Wallis DJ and Humphreys CJ
Reports on Progress in Physics, Iop Publishing vol. 76 (10) 
01-10-2013

The effect of dislocations on the efficiency of InGaN/GaN solar cells
Zhang Y, Kappers MJ, Zhu D, Oehler F, Gao F and Humphreys CJ
Solar Energy Materials and Solar Cells, Elsevier vol. 117, 279-284.  
01-10-2013

The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes
Oliver RA, Massabuau FC-P, Kappers MJ, Phillips WA, Thrush EJ, Tartan CC, Blenkhorn WE, Badcock TJ, Dawson P, Hopkins MA, Allsopp DWE and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 103 (14) 
30-09-2013

The dissociation of the [a + c] dislocation in GaN
Hirsch PB, Lozano JG, Rhode S, Horton MK, Moram MA, Zhang S, Kappers MJ, Humphreys CJ, Yasuhara A, Okunishi E and Nellist PD
The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 93 (28-30), 3925-3938.  
30-09-2013

Precision transfer printing of ultra-thin AlInGaN micron-size light-emitting diodes
Trindade AJ, Massoubre D, Guilhabert B, Zhu D, Laurand N, Gu E, Watson IM, Humphreys CJ and Dawson’ MD
2013 IEEE Photonics Conference. vol. 1, 217-218.  
01-09-2013

Measuring the composition of AlGaN layers in GaN based structures grown on 150?mm Si substrates using (2?0?5) reciprocal space maps
Wallis DJ, Zhu D, Oehler F, Westwater SP, Pujol A and Humphreys CJ
Semiconductor Science and Technology, Iop Publishing vol. 28 (9) 
21-08-2013

Fundamentals of X-ray Diffraction Characterisation of Strain in GaN Based Compounds
Oehler F, Vickers ME, Kappers MJ, Humphreys CJ and Oliver RA
Japanese Journal of Applied Physics, Iop Publishing vol. 52 (8S) 
22-07-2013

Mg Doping Affects Dislocation Core Structures in GaN
Rhode SK, Horton MK, Kappers MJ, Zhang S, Humphreys CJ, Dusane RO, Sahonta S-L and Moram MA
Physical Review Letters, American Physical Society (Aps) vol. 111 (2) 
09-07-2013

Electroluminescence Analysis and Simulation of the Effects of Injection and Temperature on Carrier Distribution in InGaN-Based Light-Emitting Diodes with Color-Coded Quantum Wells
Meneghini M, Vaccari S, Garbujo A, Trivellin N, Zhu D, Humphreys CJ, Calciati M, Goano M, Bertazzi F, Ghione G, Bellotti E, Meneghesso G and Zanoni E
Japanese Journal of Applied Physics, Iop Publishing vol. 52 (8S) 
31-05-2013

Evidence for Dark States in the Temperature Dependent Recombination Dynamics of InGaN/GaN Quantum Wells
Badcock TJ, Dawson P, Oliver RA, Kappers MJ and Humphreys CJ
Japanese Journal of Applied Physics, Iop Publishing vol. 52 (8S) 
31-05-2013

Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures
Badcock TJ, Hammersley S, Watson-Parris D, Dawson P, Godfrey MJ, Kappers MJ, McAleese C, Oliver RA and Humphreys CJ
Japanese Journal of Applied Physics, Iop Publishing vol. 52 (8S) 
31-05-2013

Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates
Taylor E, Fang F, Oehler F, Edwards PR, Kappers MJ, Lorenz K, Alves E, McAleese C, Humphreys CJ and Martin RW
Semiconductor Science and Technology, Iop Publishing vol. 28 (6) 
16-05-2013

Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs
Meneghini M, Trivellin N, Berti M, Cesca T, Gasparotto A, Vinattieri A, Bogani F, Zhu D, Humphreys CJ, Meneghesso G and Zanoni E
Gallium Nitride Materials and Devices VIII. vol. 8625 
22-02-2013

Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells
Massabuau FC-P, Trinh-Xuan L, Lodié D, Thrush EJ, Zhu D, Oehler F, Zhu T, Kappers MJ, Humphreys CJ and Oliver RA
Journal of Applied Physics, Aip Publishing vol. 113 (7) 
15-02-2013

The impact of substrate miscut on the morphology of InGaN epitaxial layers subjected to a growth interruption
Jouvet N, Kappers MJ, Humphreys CJ and Oliver RA
Journal of Applied Physics, Aip Publishing vol. 113 (6) 
11-02-2013

High-Speed Substrate-Emitting Micro-Light-Emitting Diodes for Applications Requiring High Radiance
Maaskant PP, Shams H, Akhter M, Henry W, Kappers MJ, Zhu D, Humphreys CJ and Corbett B
Applied Physics Express, Iop Publishing vol. 6 (2) 
01-02-2013

High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop
Davies MJ, Badcock TJ, Dawson P, Kappers MJ, Oliver RA and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 102 (2) 
14-01-2013

Characteristics and applications of InGaN micro-light emitting diodes on Si substrates
Tian P, McKendry JJD, Gong Z, Zhang S, Watson S, Zhu D, Watson IM, Gu E, Kelly AE, Humphreys CJ and Dawson MD
2013 IEEE Photonics Conference., 97-98.  
01-01-2013

The significance of Bragg's law in electron diffraction and microscopy, and Bragg's second law
Humphreys CJ
Acta Crystallographica Section a: Foundations and Advances, International Union of Crystallography (Iucr) vol. 69 (1), 45-50.  
05-12-2012

Properties of trench defects in InGaN/GaN quantum well structures
Sahonta S, Kappers MJ, Zhu D, Puchtler TJ, Zhu T, Bennett SE, Humphreys CJ and Oliver RA
Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 210 (1), 195-198.  
21-11-2012

Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures
Massabuau FC-P, Sahonta S-L, Trinh-Xuan L, Rhode S, Puchtler TJ, Kappers MJ, Humphreys CJ and Oliver RA
Applied Physics Letters, Aip Publishing vol. 101 (21) 
19-11-2012

Low-cost high-efficiency GaN LEDs on 6-inch Si
Humphreys C
Solid-State and Organic Lighting, SOLED 2012. 
11-11-2012

Characterisation of defects in p-GaN by admittance spectroscopy
Elsherif OS, Vernon-Parry KD, Evans-Freeman JH, Airey RJ, Kappers M and Humphreys CJ
Physica B Condensed Matter. vol. 407 (15), 2960-2963.  
01-08-2012

Recombination mechanisms in heteroepitaxial non-polar InGaN/GaN quantum wells
Badcock TJ, Hao R, Moram MA, Kappers MJ, Dawson P, Oliver RA and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 112 (1) 
01-07-2012

The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures
Hammersley S, Watson-Parris D, Dawson P, Godfrey MJ, Badcock TJ, Kappers MJ, McAleese C, Oliver RA and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 111 (8) 
15-04-2012

Analysis of Defect-Related Localized Emission Processes in InGaN/GaN-Based LEDs
Meneghini M, Vaccari S, Trivellin N, Zhu D, Humphreys C, Butendheich R, Leirer C, Hahn B, Meneghesso G and Zanoni E
Ieee Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (Ieee) vol. 59 (5), 1416-1422.  
08-03-2012

Atom probe tomography characterisation of a laser diode structure grown by molecular beam epitaxy
Bennett SE, Smeeton TM, Saxey DW, Smith GDW, Hooper SE, Heffernan J, Humphreys CJ and Oliver RA
Journal of Applied Physics, Aip Publishing vol. 111 (5) 
01-03-2012

Exciton confinement in narrow non‐polar InGaN/GaN quantum wells grown on r‐plane sapphire
Badcock TJ, Kappers MJ, Moram MA, Hao R, Dawson P and Humphreys CJ
Physica Status Solidi (B), Wiley vol. 249 (3), 494-497.  
16-02-2012

Determination of the composition and thickness of semi-polar and non-polar III-nitride films and quantum wells using X-ray scattering
Vickers ME, Hollander JL, McAleese C, Kappers MJ, Moram MA and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 111 (4) 
15-02-2012

Measurement of the Al content in AlGaN epitaxial layers by combined energy‐dispersive X‐ray and electron energy‐loss spectroscopy in a transmission electron microscope
Amari H, Kappers MJ, Humphreys CJ, Chèze C and Walther T
Physica Status Solidi (C), Wiley vol. 9 (3‐4), 1079-1082.  
14-02-2012

Studies of efficiency droop in GaN based LEDs
Phillips WA, Thrush EJ, Zhang Y and Humphreys CJ
physica status solidi (c). vol. 9 (3‐4), 765-769.  
26-01-2012

Electron holography of an in‐situ biased GaN‐based LED
Liu LZ, McAleese C, Rao DVS, Kappers MJ and Humphreys CJ
physica status solidi (c). vol. 9 (3‐4), 704-707.  
26-01-2012

On the origin of blue‐green emission from heteroepitaxial nonpolar a‐plane InGaN quantum wells
Kappers MJ, Badcock TJ, Hao R, Moram MA, Hammersley S, Dawson P and Humphreys CJ
physica status solidi (c). vol. 9 (3‐4), 465-468.  
26-01-2012

Structure and chemistry of the Si(111)/AlN interface
Radtke G, Couillard M, Botton GA, Zhu D and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 100 (1) 
02-01-2012

Low-cost high-efficiency GaN LEDs on 6-inch Si
Humphreys C
Renewable Energy and the Environment Optics and Photonics Congress. 
01-01-2012

Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements
Elsherif OS, Vernon-Parry KD, Dharmadasa IM, Evans-Freeman JH, Airey RJ, Kappers MJ and Humphreys CJ
Thin Solid Films, Elsevier vol. 520 (7), 3064-3070.  
01-01-2012

Modification of carrier localization in basal‐plane stacking faults: The effect of Si‐doping in a‐plane GaN
Badcock TJ, Kappers MJ, Moram MA, Dawson P and Humphreys CJ
Physica Status Solidi (B), Wiley vol. 249 (3), 498-502.  
27-12-2011

Defect reduction processes in heteroepitaxial non-polar a-plane GaN films
Hao R, Kappers MJ, Moram MA and Humphreys CJ
Journal of Crystal Growth, Elsevier vol. 337 (1), 81-86.  
01-12-2011

Growth, microstructure and morphology of epitaxial ScGaN films
Knoll SM, Zhang S, Joyce TB, Kappers MJ, Humphreys CJ and Moram MA
Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 209 (1), 33-40.  
24-11-2011

High‐efficiency InGaN/GaN quantum well structures on large area silicon substrates
Zhu D, McAleese C, Häberlen M, Kappers MJ, Hylton N, Dawson P, Radtke G, Couillard M, Botton GA, Sahonta S and Humphreys CJ
Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 209 (1), 13-16.  
21-11-2011

Accurate calibration for the quantification of the Al content in AlGaN epitaxial layers by energy-dispersive X-ray spectroscopy in a Transmission Electron Microscope
Amari H, Lari L, Zhang HY, Geelhaar L, Chèze C, Kappers MJ, McAleese C, Humphreys CJ and Walther T
Journal of Physics Conference Series. vol. 326 (1) 
09-11-2011

Strain-induced effects on the electronic structure and N K-edge ELNES of wurtzite AlN and AlxGa1−xN
Petrov M, Holec D, Lymperakis L, Neugebauer J and Humphreys CJ
Journal of Physics Conference Series. vol. 326 (1) 
09-11-2011

Response to “Comment on ‘The effects of Si doping on dislocation movement and tensile stress in GaN films’” [J. Appl. Phys. 109, 073509 (2011)]
Moram MA, Kappers MJ, Massabuau F, Oliver RA and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 110 (9) 
01-11-2011

Structural Characterisation of Improved GaN Epilayers Grown on a Ge(111) Substrate
Zhang Y, Fu W-Y, Humphreys C and Lieten R
Applied Physics Express, Iop Publishing vol. 4 (9) 
26-08-2011

The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r-Plane Sapphire Substrates
Badcock TJ, Hao R, Moram MA, Kappers MJ, Dawson P and Humphreys CJ
Japanese Journal of Applied Physics, Iop Publishing vol. 50 (8R) 
01-08-2011

The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on r -Plane Sapphire Substrates
Badcock TJ, Hao R, Moram MA, Kappers MJ, Dawson P and Humphreys CJ
Japanese Journal of Applied Physics, Iop Publishing vol. 50 (8R) 
01-08-2011

Atom probe tomography assessment of the impact of electron beam exposure on InxGa1−xN/GaN quantum wells
Bennett SE, Saxey DW, Kappers MJ, Barnard JS, Humphreys CJ, Smith GD and Oliver RA
Applied Physics Letters, Aip Publishing vol. 99 (2) 
11-07-2011

Study of efficiency droop and carrier localisation in an InGaN/GaN quantum well structure
Hammersley S, Badcock TJ, Watson‐Parris D, Godfrey MJ, Dawson P, Kappers MJ and Humphreys CJ
physica status solidi (c). vol. 8 (7‐8), 2194-2196.  
20-06-2011

Properties of surface‐pit related emission in a ‐plane InGaN/GaN quantum wells grown on r ‐plane sapphire
Badcock TJ, Hao R, Moram MA, Dawson P, Kappers MJ and Humphreys CJ
physica status solidi (c). vol. 8 (7‐8), 2179-2181.  
07-06-2011

Dislocation Climb in c-Plane AlN Films
Fu WY, Kappers MJ, Zhang Y, Humphreys CJ and Moram MA
Applied Physics Express, Iop Publishing vol. 4 (6) 
01-06-2011

The effect of indium concentration on the optical properties of a‐plane InGaN/GaN quantum wells grown on r‐plane sapphire substrates
Badcock TJ, Hao R, Moram MA, Dawson P, Kappers MJ and Humphreys CJ
Physica Status Solidi (a) – Applications and Materials Science, Wiley vol. 208 (7), 1529-1531.  
01-06-2011

Towards predictive modeling of near-edge structures in electron energy-loss spectra of AlN-based ternary alloys
Holec D, Rachbauer R, Kiener D, Cherns PD, Costa PMFJ, McAleese C, Mayrhofer PH and Humphreys CJ
Physical Review B, American Physical Society (Aps) vol. 83 (16) 
15-04-2011

The effects of Si doping on dislocation movement and tensile stress in GaN films
Moram MA, Kappers MJ, Massabuau F, Oliver RA and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 109 (7) 
01-04-2011

The Mystery of the Last Supper
Humphreys CJ
 
28-03-2011

Carrier localization mechanisms in InxGa1-xN/GaN quantum wells
Watson-Parris D, Godfrey MJ, Dawson P, Oliver RA, Galtrey MJ, Kappers MJ and Humphreys CJ
Physical Review B, American Physical Society (Aps) vol. 83 (11) 
15-03-2011

Lighting
Zhu D and Humphreys CJ
In Fundamentals of Materials For Energy and Environmental Sustainability, Cambridge University Press (Cup) 474-490.  
01-01-2011

A quantitative model for doping contrast in the scanning electron microscope using calculated potential distributions and Monte Carlo simulations
Chee AKW, Broom RF, Humphreys CJ and Bosch EGT
Journal of Applied Physics, Aip Publishing vol. 109 (1) 
01-01-2011

Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates
Zhu D, McAleese C, Häberlen M, Salcianu C, Thrush T, Kappers M, Phillips A, Lane P, Kane M, Wallis D, Martin T, Astles M, Hylton N, Dawson P and Humphreys C
Journal of Applied Physics, Aip Publishing vol. 109 (1) 
01-01-2011

Dislocation movement in GaN films
Moram MA, Sadler TC, Häberlen M, Kappers MJ and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 97 (26) 
27-12-2010

Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy
Radtke G, Couillard M, Botton GA, Zhu D and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 97 (25) 
20-12-2010

Inclined dislocation arrays in AlGaN/AlGaN quantum well structures emitting at 290 nm
Chang TY, Moram MA, McAleese C, Kappers MJ and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 108 (12) 
15-12-2010

Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice
Bennett SE, Ulfig RM, Clifton PH, Kappers MJ, Barnard JS, Humphreys CJ and Oliver RA
Ultramicroscopy, Elsevier vol. 111 (3), 207-211.  
01-12-2010

The effects of annealing on non-polar (112¯0) a-plane GaN films
Hao R, Zhu T, Häberlen M, Chang TY, Kappers MJ, Oliver RA, Humphreys CJ and Moram MA
Journal of Crystal Growth, Elsevier vol. 312 (23), 3536-3543.  
01-11-2010

Electronic and optical properties of nonpolar a-plane GaN quantum wells
Schulz S, Badcock TJ, Moram MA, Dawson P, Kappers MJ, Humphreys CJ and O’Reilly EP
Physical Review B, American Physical Society (Aps) vol. 82 (12) 
15-09-2010

Microstructural origins of localization in InGaN quantum wells
Oliver RA, Bennett SE, Zhu T, Beesley DJ, Kappers MJ, Saxey DW, Cerezo A and Humphreys CJ
Journal of Physics D, Iop Publishing vol. 43 (35) 
19-08-2010

A Direct Method for Charge Collection Probability Computation Using the Reciprocity Theorem
Kurniawan O, Tan CC, Ong VKS, Li E and Humphreys CJ
Ieee Transactions on Electron Devices, Institute of Electrical and Electronics Engineers (Ieee) vol. 57 (10), 2455-2461.  
09-08-2010

Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth
Häberlen M, Badcock TJ, Moram MA, Hollander JL, Kappers MJ, Dawson P, Humphreys CJ and Oliver RA
Journal of Applied Physics, Aip Publishing vol. 108 (3) 
01-08-2010

Low dislocation density nonpolar (11‐20) GaN films achieved using scandium nitride interlayers
Moram MA, Kappers MJ and Humphreys CJ
physica status solidi (c). vol. 7 (7‐8), 1778-1780.  
01-07-2010

Energy filtered scanning electron microscopy: applications to characterisation of semiconductors
Rodenburg C, Jepson MAE, Inkson BJ, Bosch EGT and Humphreys CJ
Journal of Physics Conference Series. vol. 241 (1) 
01-07-2010

Atom probe extended to AlGaN: three‐dimensional imaging of a Mg‐doped AlGaN/GaN superlattice
Bennett SE, Clifton PH, Ulfig RM, Kappers MJ, Barnard JS, Humphreys CJ and Oliver RA
physica status solidi (c). vol. 7 (7‐8), 1781-1783.  
01-07-2010

InGaN/GaN LEDs grown on Si(111): dependence of device performance on threading dislocation density and emission wavelength
Zhu D, McAleese C, Häberlen M, Salcianu C, Thrush T, Kappers M, Phillips A, Lane P, Kane M, Wallis D, Martin T, Astles M and Humphreys C
physica status solidi (c). vol. 7 (7‐8), 2168-2170.  
01-07-2010

Energy landscape and carrier wave‐functions in InGaN/GaN quantum wells
Watson‐Parris D, Godfrey MJ, Oliver RA, Dawson P, Galtrey MJ, Kappers MJ and Humphreys CJ
physica status solidi (c). vol. 7 (7‐8), 2255-2258.  
01-07-2010

Q‐factor measurements on planar nitride cavities
Collins DP, Holmes MJ, Taylor RA, Oliver RA, Kappers MJ and Humphreys CJ
physica status solidi (c). vol. 7 (7‐8), 1866-1868.  
01-07-2010

Effect of overgrowth conditions on the optical properties of lateral epitaxially overgrown a ‐plane GaN
Badcock TJ, Häberlen M, Kappers MJ, Moram MA, Dawson P, Humphreys CJ and Oliver RA
physica status solidi (c). vol. 7 (7‐8), 2088-2090.  
01-07-2010

Carrier dynamics in non‐polar GaN/AlGaN quantum wells intersected by basal‐plane stacking faults
Badcock TJ, Hammersley S, Kappers MJ, Humphreys CJ and Dawson P
physica status solidi (c). vol. 7 (7‐8), 1894-1896.  
01-07-2010

Characterising the degree of polarisation anisotropy in an a ‐plane GaN film
Badcock TJ, Schulz S, Moram MA, Kappers MJ, Dawson P, O'Reilly EP and Humphreys CJ
physica status solidi (c). vol. 7 (7‐8), 1897-1899.  
01-07-2010

Looking Inside the Fascinating Nanoworld Controlling Light Emission from InGaN/GaN Quantum Well Devices
Humphreys C, Oliver R, Kappers M, Bennett , Parris D, Dawson P, Godfrey M, Clifton P, Larson D, Ulfig R, Saxey D and Cerezo A
Microscopy and Microanalysis, Oxford University Press (Oup) vol. 16 (S2), 1890-1891.  
01-07-2010

Dislocation reduction in GaN grown on Si(111) using a strain‐driven 3D GaN interlayer
Häberlen M, Zhu D, McAleese C, Zhu T, Kappers MJ and Humphreys CJ
physica status solidi (b). vol. 247 (7), 1753-1756.  
08-06-2010

Imaging dislocations in gallium nitride across broad areas using atomic force microscopy
Bennett SE, Holec D, Kappers MJ, Humphreys CJ and Oliver RA
Review of Scientific Instruments, Aip Publishing vol. 81 (6) 
01-06-2010

Combined structure‐factor phase measurement and theoretical calculations for mapping of chemical bonds in GaN
Jiang B, Zuo JM, Holec D, Humphreys CJ, Spackman M and Spence JCH
Acta Crystallographica Section a: Foundations and Advances, International Union of Crystallography (Iucr) vol. 66 (4), 446-450.  
07-05-2010

Progress towards quantitative dopant profiling in the SEM
Chee KWA, Bosch EGT and Humphreys CJ
Journal of Physics Conference Series. vol. 209 (1) 
01-02-2010

Lattice distortions in GaN thin films on (0001) sapphire
Rao DVS, Beanland R, Kappers MJ, Zhu D and Humphreys CJ
Journal of Physics Conference Series. vol. 209 (1) 
01-02-2010

Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNx and AlGaN layers
Haeberlen M, Zhu D, McAleese C, Kappers MJ and Humphreys CJ
Journal of Physics Conference Series. vol. 209 (1) 
01-02-2010

Scanning capacitance microscopy studies of GaN grown by epitaxial layer overgrowth
Oliver RA, Bennett SE, Sumner J, Kappers MJ and Humphreys CJ
Journal of Physics Conference Series. vol. 209 (1) 
01-02-2010

Site-selective dopant profiling of p-n junction specimens in the dual-beam FIB/SEM system
Chee KWA, Beanland R, Midgley PA and Humphreys CJ
Journal of Physics Conference Series. vol. 209 (1) 
01-02-2010

The role of rough surfaces in quantitative ADF imaging of gallium nitride-based materials
Barnard JS, Bennett SE, Oliver RA, Kappers MJ and Humphreys CJ
Journal of Physics Conference Series. vol. 209 (1) 
01-02-2010

Mg dopant distribution in an AlGaN/GaN p-type superlattice assessed using atom probe tomography, TEM and SIMS
Bennett SE, Clifton PH, Ulfig RM, Kappers MJ, Barnard JS, Humphreys CJ and Oliver RA
Journal of Physics Conference Series. vol. 209 (1) 
01-02-2010

Progress towards site-specific dopant profiling in the scanning electron microscope
Jepson MAE, Inkson BJ, Beanland R, Chee AKW, Humphreys CJ and Rodenburg C
Journal of Physics Conference Series. vol. 209 (1) 
01-02-2010

Reduction of the dislocation density in HVPE-grown GaN epi-layers by an in situ SiNx treatment
Ashraf H, Rao DVS, Gogova D, Siche D, Fornari R, Humphreys CJ and Hageman PR
Journal of Crystal Growth, Elsevier vol. 312 (4), 595-600.  
01-02-2010

Energy filtered scanning electron microscopy: Applications to dopant contrast
Rodenburg C, Jepson MAE, Inkson BJ, Bosch E, Chee AKW and Humphreys CJ
Journal of Physics Conference Series. vol. 209 (1) 
01-02-2010

Basal-plane stacking faults in non-polar GaN studied by off-axis electron holography
Liu LZ-Y, Rao DVS, Kappers MJ, Humphreys CJ and Geiger D
Journal of Physics Conference Series. vol. 209 (1) 
01-02-2010

Measuring dislocation densities in nonpolar a-plane GaN films using atomic force microscopy
Moram MA, Johnston CF, Kappers MJ and Humphreys CJ
Journal of Physics D, Iop Publishing vol. 43 (5) 
21-01-2010

Low dislocation density GaN growth on high-temperature AlN buffer layers on (0001) sapphire
Kappers MJ, Moram MA, Rao DVS, McAleese C and Humphreys CJ
Journal of Crystal Growth, Elsevier vol. 312 (3), 363-367.  
01-01-2010

Cavity Enhancement of Single Quantum Dot Emission in the Blue
Taylor RA, Jarjour AF, Collins DP, Holmes MJ, Oliver RA, Kappers MJ and Humphreys CJ
Discover Nano, Springer Nature vol. 5 (3) 
27-12-2009

Structural properties of wurtzitelike ScGaN films grown by NH3-molecular beam epitaxy
Moram MA, Zhang Y, Joyce TB, Holec D, Chalker PR, Mayrhofer PH, Kappers MJ and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 106 (11) 
01-12-2009

Scanning capacitance microscopy studies of unintentional doping in epitaxial lateral overgrowth GaN
Sumner J, Oliver RA, Kappers MJ and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 106 (10) 
15-11-2009

The Spatial Distribution of Threading Dislocations in Gallium Nitride Films
Moram MA, Oliver RA, Kappers MJ and Humphreys CJ
Advanced Materials, Wiley vol. 21 (38‐39), 3941-3944.  
16-10-2009

Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes
Charash R, Maaskant PP, Lewis L, McAleese C, Kappers MJ, Humphreys CJ and Corbett B
Applied Physics Letters, Aip Publishing vol. 95 (15) 
12-10-2009

On the origin of threading dislocations in GaN films
Moram MA, Ghedia CS, Rao DVS, Barnard JS, Zhang Y, Kappers MJ and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 106 (7) 
01-10-2009

Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images
Oliver RA, Sumner J, Kappers MJ and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 106 (5) 
01-09-2009

Investigating stacking faults in nonpolar gallium nitride films using X-ray diffraction
Moram MA, Johnston CF, Kappers MJ and Humphreys CJ
Physica B Condensed Matter, Elsevier vol. 404 (16), 2189-2191.  
01-08-2009

Atom Probe Tomography Studies of GaN-Based Semiconductor Materials
Bennett , Oliver R, Saxey D, Cerezo A, Clifton P, Ulfig R, Kappers M and Humphreys C
Microscopy and Microanalysis. vol. 15 (S2), 280-281.  
01-07-2009

Highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy
Hertkorn J, Thapa SB, Wunderer T, Scholz F, Wu ZH, Wei QY, Ponce FA, Moram MA, Humphreys CJ, Vierheilig C and Schwarz UT
Journal of Applied Physics, Aip Publishing vol. 106 (1) 
01-07-2009

The effects of film surface roughness on x-ray diffraction of nonpolar gallium nitride films
Moram MA, Johnston CF, Kappers MJ and Humphreys CJ
Journal of Physics D, Iop Publishing vol. 42 (13) 
16-06-2009

Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates
Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Rao DVS, Sanchez AM and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 105 (12) 
15-06-2009

Lattice distortions in GaN on sapphire using the CBED–HOLZ technique
Rao DVS, McLaughlin K, Kappers MJ and Humphreys CJ
Ultramicroscopy, Elsevier vol. 109 (10), 1250-1255.  
12-06-2009

Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers
Moram MA, Johnston CF, Kappers MJ and Humphreys CJ
Journal of Crystal Growth, Elsevier vol. 311 (12), 3239-3242.  
01-06-2009

Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire
Johnston CF, Kappers MJ, Moram MA, Hollander JL and Humphreys CJ
Journal of Crystal Growth, Elsevier vol. 311 (12), 3295-3299.  
01-06-2009

Defect reduction in non‐polar (11$ \bar 2 $0) GaN grown on (1$ \bar 1 $02) sapphire
Johnston CF, Kappers MJ, Moram MA, Hollander JL and Humphreys CJ
physica status solidi (a) – applications and materials science. vol. 206 (6), 1190-1193.  
01-06-2009

Understanding x-ray diffraction of nonpolar gallium nitride films
Moram MA, Johnston CF, Hollander JL, Kappers MJ and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 105 (11) 
01-06-2009

Performance and degradation characteristics of blue–violet laser diodes grown by molecular beam epitaxy
Tan WS, Kauer M, Hooper SE, Smeeton TM, Bousquet V, Rossetti M, Heffernan J, Xiu H and Humphreys CJ
physica status solidi (a) – applications and materials science. vol. 206 (6), 1205-1210.  
01-06-2009

Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot
Collins D, Jarjour A, Hadjipanayi M, Taylor R, Oliver R, Kappers M, Humphreys C and Tahraoui A
Nanotechnology, Iop Publishing vol. 20 (24) 
27-05-2009

Optical and microstructural properties of semi‐polar (11‐22) InGaN/GaN quantum well structures
Hylton NP, Dawson P, Johnston CF, Kappers MJ, Hollander JL, McAleese C and Humphreys CJ
physica status solidi (c). vol. 6 (S2), s727-s730.  
26-05-2009

Optical polarisation anisotropy in a ‐plane GaN/AlGaN multiple quantum well structures
Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Rao DVS, Sanchez AM and Humphreys CJ
physica status solidi (c). vol. 6 (S2), s523-s526.  
26-05-2009

Defect reduction in (112¯2) semipolar GaN grown on m-plane sapphire using ScN interlayers
Johnston CF, Moram MA, Kappers MJ and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 94 (16) 
20-04-2009

Microstructural evolution of nonpolar (11-20) GaN grown on (1-102) sapphire using a 3D-2D method
Johnston CF, Kappers MJ and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 105 (7) 
01-04-2009

Non‐linear excitation and correlation studies of single InGaN quantum dots
Collins DP, Jarjour AF, Taylor RA, Hadjipanayi M, Oliver RA, Kappers MJ, Humphreys CJ and Tahraoui A
physica status solidi (c). vol. 6 (4), 864-867.  
01-04-2009

HANSIS software tool for the automated analysis of HOLZ lines
Holec D, Rao DVS and Humphreys CJ
Ultramicroscopy, Elsevier vol. 109 (7), 837-844.  
24-03-2009

Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy
Hall JL, Moram MA, Sanchez A, Novikov SV, Kent AJ, Foxon CT, Humphreys CJ and Campion RP
Journal of Crystal Growth, Elsevier vol. 311 (7), 2054-2057.  
01-03-2009

GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE
Zhu D, McAleese C, McLaughlin KK, Häberlen M, Salcianu CO, Thrush EJ, Kappers MJ, Phillips WA, Lane P, Wallis DJ, Martin T, Astles M, Thomas S, Pakes A, Heuken M and Humphreys CJ
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII. vol. 7231 
03-02-2009

Coherent terahertz acoustic vibrations in polar and semipolar gallium nitride-based superlattices
Moss DM, Akimov AV, Kent AJ, Glavin BA, Kappers MJ, Hollander JL, Moram MA and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 94 (1) 
05-01-2009

Equilibrium critical thickness for misfit dislocations in III-nitrides
Holec D, Zhang Y, Rao DVS, Kappers MJ, McAleese C and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 104 (12) 
15-12-2008

Electrically driven single InGaN/GaN quantum dot emission
Jarjour AF, Taylor RA, Oliver RA, Kappers MJ, Humphreys CJ and Tahraoui A
Applied Physics Letters, Aip Publishing vol. 93 (23) 
08-12-2008

A theoretical study of ELNES spectra of AlxGa1-xN using Wien2k and Telnes programs
Holec D, Costa PMFJ, Cherns PD and Humphreys CJ
Computational Materials Science. vol. 44 (1), 91-96.  
01-11-2008

Properties of non-polar a-plane GaN/AlGaN quantum wells
Kappers MJ, Hollander JL, Johnston CF, McAleese C, Rao DVS, Sanchez AM, Humphreys CJ, Badcock TJ and Dawson P
Journal of Crystal Growth. vol. 310 (23), 4983-4986.  
01-11-2008

The effect of oxygen incorporation in sputtered scandium nitride films
Moram MA, Barber ZH and Humphreys CJ
Thin Solid Films, Elsevier vol. 516 (23), 8569-8572.  
01-10-2008

Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates
Badcock TJ, Dawson P, Kappers MJ, McAleese C, Hollander JL, Johnston CF, Rao DVS, Sanchez AM and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 93 (10) 
08-09-2008

Characterisation of non-polar (11-20) gallium nitride using TEM techniques
Johnston CF, Kappers MJ, Barnard JS and Humphreys CJ
Journal of Physics Conference Series. vol. 126 (1) 
01-08-2008

High resolution dopant profiling in the SEM, image widths and surface band-bending
Chee KWA, Rodenburg C and Humphreys CJ
Journal of Physics Conference Series. vol. 126 (1) 
01-08-2008

Insights into the growth mechanism of InxGa1−xN epitaxial nanostructures formed using a silane predose
Oliver RA, Van der Laak NK, Kappers MJ and Humphreys CJ
Journal of Crystal Growth, Elsevier vol. 310 (15), 3459-3465.  
01-07-2008

Three-dimensional atom probe analysis of green- and blue-emitting InxGa1−xN∕GaN multiple quantum well structures
Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Clifton PH, Larson D, Saxey DW and Cerezo A
Journal of Applied Physics, Aip Publishing vol. 104 (1) 
01-07-2008

High Resolution Laplace Deep Level Transient Spectroscopy Studies of Shallow and Deep Levels in n-GaN
Emiroglu D, Evans-Freeman J, Kappers MJ, McAleese C and Humphreys CJ
2008 Conference on Optoelectronic and Microelectronic Materials and Devices., 30-33.  
01-07-2008

High resolution transmission electron microscopy and three-dimensional atom probe microscopy as complementary techniques for the high spatial resolution analysis of GaN based quantum well systems
Oliver RA, Galtrey MJ and Humphreys CJ
Materials Science and Technology, Sage Publications vol. 24 (6), 675-681.  
01-06-2008

The effect of wafer curvature on x-ray rocking curves from gallium nitride films
Moram MA, Vickers ME, Kappers MJ and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 103 (9) 
01-05-2008

Morphological study of non‐polar (11‐20) GaN grown on r‐plane (1‐102) sapphire
Johnston CF, Kappers MJ, Barnard JS and Humphreys CJ
physica status solidi (c). vol. 5 (6), 1786-1788.  
01-05-2008

Assessment of scanning spreading resistance microscopy for application to n‐type GaN
Sumner J, Oliver RA, Kappers MJ and Humphreys CJ
physica status solidi (c). vol. 5 (6), 1652-1654.  
01-05-2008

Palladium‐based on‐wafer electroluminescence studies of GaN‐based LED structures
Salcianu CO, Thrush EJ, Plumb RG, Boyd AR, Rockenfeller O, Schmitz D, Heuken M and Humphreys CJ
physica status solidi (c). vol. 5 (6), 2219-2221.  
01-05-2008

Gross well‐width fluctuations in InGaN quantum wells
Oliver RA, Kappers MJ and Humphreys CJ
physica status solidi (c). vol. 5 (6), 1475-1481.  
01-05-2008

Very low dislocation density, resistive GaN films obtained using transition metal nitride interlayers
Moram MA, Kappers MJ, Zhang Y, Barber ZH and Humphreys CJ
physica status solidi (a) – applications and materials science. vol. 205 (5), 1064-1066.  
01-05-2008

Degradation of III‐nitride laser diodes grown by molecular beam epitaxy
Xiu H, Thrush EJ, Kauer M, Smeeton TM, Hooper SE, Heffernan J and Humphreys CJ
physica status solidi (c). vol. 5 (6), 2204-2206.  
01-05-2008

Structural features in GaN grown on a Ge(111) substrate
Zhang Y, McAleese C, Xiu H, Humphreys CJ, Lieten RR, Degroote S and Borghs G
physica status solidi (c). vol. 5 (6), 1802-1804.  
01-05-2008

Growth of epitaxial thin films of scandium nitride on 100-oriented silicon
Moram MA, Novikov SV, Kent AJ, Nörenberg C, Foxon CT and Humphreys CJ
Journal of Crystal Growth, Elsevier vol. 310 (11), 2746-2750.  
01-05-2008

High brightness near‐ultraviolet resonant LEDs
Corbett B, Zhu D, Roycroft B, Maaskant P, Akhter M, McAleese C, Kappers MJ and Humphreys CJ
physica status solidi (c). vol. 5 (6), 2056-2058.  
01-05-2008

Origin of additional threading dislocations in AlGaN grown on GaN using AlN as an interlayer
Datta R, McAleese C, Cherns P, Rayment FDG and Humphreys CJ
physica status solidi (c). vol. 5 (6), 1743-1745.  
01-05-2008

High resolution Laplace deep level transient spectroscopy studies of electron and hole traps in n‐type GaN
Emiroglu D, Evans‐Freeman J, Kappers MJ, McAleese C and Humphreys CJ
physica status solidi (c). vol. 5 (6), 1482-1484.  
01-05-2008

Experimental and theoretical study of the quantum-confined Stark effect in a single InGaN/GaN quantum dot under applied vertical electric field
Jarjour AF, Oliver RA, Tahraoui A, Kappers MJ, Taylor RA and Humphreys CJ
Superlattices and Microstructures. vol. 43 (5-6), 431-435.  
01-05-2008

Effects of resonant LO phonon assisted excitation on the photoluminescence spectra of InGaN/GaN quantum wells
Dawson P, Hylton NP, Kappers MJ, McAleese C and Humphreys CJ
physica status solidi (c). vol. 5 (6), 2270-2273.  
01-05-2008

Unintentional doping in GaN assessed by scanning capacitance microscopy
Sumner J, Bakshi SD, Oliver RA, Kappers MJ and Humphreys CJ
physica status solidi (b). vol. 245 (5), 896-898.  
28-04-2008

Atom probe reveals the structure of Inx Ga1–x N based quantum wells in three dimensions
Galtrey MJ, Oliver RA, Kappers MJ, McAleese C, Zhu D, Humphreys CJ, Clifton PH, Larsen D and Cerezo A
physica status solidi (b). vol. 245 (5), 861-867.  
28-04-2008

Degradation of InGaN∕GaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings
Rossetti M, Smeeton TM, Tan W-S, Kauer M, Hooper SE, Heffernan J, Xiu H and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 92 (15) 
14-04-2008

Solid-State Lighting
Humphreys CJ
Mrs Bulletin, Springer Nature vol. 33 (4), 459-470.  
01-04-2008

Improvements in a-plane GaN crystal quality by a two-step growth process
Hollander JL, Kappers MJ, McAleese C and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 92 (10) 
10-03-2008

The origin and reduction of dislocations in Gallium Nitride
Oliver RA, Kappers MJ, McAleese C, Datta R, Sumner J and Humphreys CJ
Journal of Materials Science: Materials in Electronics. vol. 19 (Suppl 1), 208-214.  
05-03-2008

Assessment of the performance of scanning capacitance microscopy for n-type gallium nitride
Sumner J, Oliver RA, Kappers MJ and Humphreys CJ
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, American Vacuum Society vol. 26 (2), 611-617.  
01-03-2008

Controlled Integration of Nanocrystals in Inverted Hexagonal Nano‐Pits at the Surface of Light‐Emitting Heterostructures (Adv. Mater. 5/2008)
de Sousa Pereira SM, Martins MA, Trindade T, Watson IM, Zhu D and Humphreys CJ
Advanced Materials, Wiley vol. 20 (5) 
29-02-2008

Controlled Integration of Nanocrystals in Inverted Hexagonal Nano‐Pits at the Surface of Light‐Emitting Heterostructures
de Sousa Pereira SM, Martins MA, Trindade T, Watson IM, Zhu D and Humphreys CJ
Advanced Materials, Wiley vol. 20 (5), 1038-1043.  
08-02-2008

Growth and assessment of InGaN quantum dots in a microcavity: A blue single photon source
Oliver RA, Jarjour AF, Taylor RA, Tahraoui A, Zhang Y, Kappers MJ and Humphreys CJ
Materials Science and Engineering B. vol. 147 (2-3), 108-113.  
01-02-2008

Compositional inhomogeneity of a high-efficiency InxGa1−xN based multiple quantum well ultraviolet emitter studied by three dimensional atom probe
Galtrey MJ, Oliver RA, Kappers MJ, McAleese C, Zhu D, Humphreys CJ, Clifton PH, Larson D and Cerezo A
Applied Physics Letters, Aip Publishing vol. 92 (4) 
28-01-2008

Degradation of GaN-based quantum well light-emitting diodes
Zhao LX, Thrush EJ, Humphreys CJ and Phillips WA
Journal of Applied Physics, Aip Publishing vol. 103 (2) 
15-01-2008

Calibration and Applications of Scanning Capacitance Microscopy: n-Type GaN
Sumner J, Oliver RA, Kappers MJ and Humphreys CJ
Springer Proceedings in Physics. vol. 120, 463-466.  
01-01-2008

Strain Relaxation in an AlGaN/GaN Quantum Well System
Cherns PD, McAleese C, Kappers MJ and Humphreys CJ
Springer Proceedings in Physics. vol. 120, 25-28.  
01-01-2008

Quantitative Dopant Profiling in the SEM Including Surface States
Chee KWA, Rodenburg C and Humphreys CJ
Springer Proceedings in Physics. vol. 120, 407-410.  
01-01-2008

An Initial Exploration of GaN Grown on a Ge-(111) Substrate
Zhang Y, McAleese C, Xiu H, Humphreys CJ, Lieten RR, Degroote S and Borghs G
Springer Proceedings in Physics. vol. 120, 61-64.  
01-01-2008

The Puzzle of Exciton Localisation in GaN-Based Structures: TEM, AFM and 3D APFIM Hold the Key
Humphreys CJ, Galtrey MJ, Laak NVD, Oliver RA, Kappers MJ, Barnard JS, Graham DM and Dawson P
Springer Proceedings in Physics. vol. 120, 3-12.  
01-01-2008

The role of strain in controlling the surface morphology of AlxGa1−xN following in situ treatment with SiH4 and NH3
Ketteniss N, Oliver RA, McAleese C, Kappers MJ, Zhang Y and Humphreys CJ
Applied Surface Science, Elsevier vol. 254 (7), 2124-2130.  
01-01-2008

Three-Dimensional Atom Probe Characterisation of III-Nitride Quantum Well Structures
Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Stokes DJ, Clifton PH and Cerezo A
Springer Proceedings in Physics. vol. 120, 161-164.  
01-01-2008

EBIC Characterisation of Diffusion and Recombination of Minority Carriers in GaN-Based LEDs
Moldovan* G, Ong VKS, Kurniawan O, Kazemian P, Edwards PR and Humphreys C
Springer Proceedings in Physics. vol. 120, 485-488.  
01-01-2008

The atomic structure of GaN-based quantum wells and interfaces
Humphreys CJ, Galtrey MJ, Oliver RA, Kappers MJ, Zhu D, McAleese C, van der Laak NK, Graham DM, Dawson P, Cerezo A and Clifton PH
In Emc 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany, Springer Nature 41-42.  
01-01-2008

Calculations of Equilibrium Critical Thickness for Non-Polar Wurtzite InGaN/GaN Systems
Holec D and Humphreys CJ
 
06-12-2007

Epitaxial lateral overgrowth of off-basal GaN thin-film growth orientations
Hollander JL, Kappers MJ and Humphreys CJ
Physica B Condensed Matter. vol. 401, 307-310.  
01-12-2007

Interlayer methods for reducing the dislocation density in gallium nitride
Kappers MJ, Moram MA, Zhang Y, Vickers ME, Barber ZH and Humphreys CJ
Physica B Condensed Matter. vol. 401, 296-301.  
01-12-2007

Atom probe tomography today
Cerezo A, Clifton PH, Galtrey MJ, Humphreys CJ, Kelly TF, Larson DJ, Lozano-Perez S, Marquis EA, Oliver RA, Sha G, Thompson K, Zandbergen M and Alvis RL
Materials Today, Elsevier vol. 10 (12), 36-42.  
01-12-2007

Deep electronic states associated with a metastable hole trap in n-type GaN
Emiroglu D, Evans-Freeman JH, Kappers MJ, McAleese C and Humphreys CJ
Physica B Condensed Matter, Elsevier vol. 401, 311-314.  
01-12-2007

Advantages and disadvantages of using YAG: Ce nanophosphors encapsulated on blue-emitting LED chips as backlights for displays
Withnall R, Silver J, Ireland TG, Lipman AL, Fern GR, McAleese C, Humphreys C and Phillips WA
SID Conference Record of the International Display Research Conference., 179-182.  
01-12-2007

Chapter 42
Humphreys CJ
In Turning Points in Solid-State, Materials and Surface Science, Royal Society of Chemistry (Rsc) 698-710.  
30-11-2007

Control of the Oscillator Strength of the Exciton in a Single InGaN-GaN Quantum Dot
Jarjour AF, Oliver RA, Tahraoui A, Kappers MJ, Humphreys CJ and Taylor RA
Physical Review Letters, American Physical Society (Aps) vol. 99 (19) 
09-11-2007

Excitation energy dependence of the photoluminescence spectrum of an InxGa1−xN∕GaN single quantum well structure
Hylton NP, Dawson P, Kappers MJ, McAleese C and Humphreys CJ
Physical Review B, American Physical Society (Aps) vol. 76 (20) 
05-11-2007

Observation of long-range compositional fluctuations in glasses: Implications for atomic and electronic structure
Jiang N, Qiu J, Humphreys CJ and Spence JCH
Micron, Elsevier vol. 39 (6), 698-702.  
22-10-2007

Electron energy loss near edge structure (ELNES) spectra of AlN and AlGaN: A theoretical study using the Wien2k and Telnes programs
Holec D, Costa PMFJ, Cherns PD and Humphreys CJ
Micron, Elsevier vol. 39 (6), 690-697.  
22-10-2007

Response to “Comment on ‘Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: assessment of possible indium clustering’” [Appl. Phys. Lett. 91, 176101 (2007)]
Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Clifton PH, Cerezo A and Smith GDW
Applied Physics Letters, Aip Publishing vol. 91 (17) 
22-10-2007

Growth of dislocation-free GaN islands on Si(1 1 1) using a scandium nitride buffer layer
Moram MA, Kappers MJ, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ
Journal of Crystal Growth vol. 308 (2), 302-308.  
15-10-2007

Dislocation reduction in gallium nitride films using scandium nitride interlayers
Moram MA, Zhang Y, Kappers MJ, Barber ZH and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 91 (15) 
08-10-2007

Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer
Moram MA, Kappers MJ, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ
Journal of Crystal Growth, Elsevier vol. 308 (2), 302-308.  
01-10-2007

Enhanced efficiency of near-UV emitting LEDs for solid state lighting applications
Zhu D, Corbett B, Roycroft B, Maaskant P, McAleese C, Akhter M, Kappers MJ and Humphreys CJ
Manufacturing LEDs for Lighting and Displays. vol. 6797 
25-09-2007

Misoriented domains in (0001)-GaN/(111)-Ge grown by molecular beam epitaxy
Zhang Y, McAleese C, Xiu H, Humphreys CJ, Lieten RR, Degroote B and Borghs G
Applied Physics Letters, Aip Publishing vol. 91 (9) 
27-08-2007

3D Atom Probe Analysis of Quantum Well and Quantum Dot Materials
Cerezo A, Chang L, Clifton P, Galtrey M, Gerstl S, Humphreys C, Mueller M, Oliver R, Smith G and Wu Y
Microscopy and Microanalysis, Oxford University Press (Oup) vol. 13 (S02), 1608-1609.  
01-08-2007

Cavity-enhanced blue single-photon emission from a single InGaN∕GaN quantum dot
Jarjour AF, Taylor RA, Oliver RA, Kappers MJ, Humphreys CJ and Tahraoui A
Applied Physics Letters, Aip Publishing vol. 91 (5) 
30-07-2007

Accurate experimental determination of the Poisson’s ratio of GaN using high-resolution x-ray diffraction
Moram MA, Barber ZH and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 102 (2) 
15-07-2007

Characterization of InGaN quantum wells with gross fluctuations in width
van der Laak NK, Oliver RA, Kappers MJ and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 102 (1) 
01-07-2007

Practical issues in carrier‐contrast imaging of GaN structures
Sumner J, Oliver RA, Kappers MJ and Humphreys CJ
physica status solidi (c). vol. 4 (7), 2576-2580.  
01-06-2007

Critical thickness calculations for InGaN/GaN
Holec D, Costa PMFJ, Kappers MJ and Humphreys CJ
Journal of Crystal Growth. vol. 303 (1), 314-317.  
01-05-2007

Does In form In-rich clusters in InGaN quantum wells?
Humphreys CJ
The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 87 (13), 1971-1982.  
01-05-2007

Atom probe provides evidence to question InGaN cluster theory
Galtrey M, Oliver R and Humphreys C
Compound Semiconductor vol. 13 (4), 27-30.  
01-05-2007

Resonant Photoluminescence Spectroscopy of InGaN/GaN Single Quantum Well Structures
Graham DM, Dawson P, Godfrey MJ, Kappers MJ and Humphreys CJ
AIP Conference Proceedings. vol. 893 (1), 433-434.  
10-04-2007

Optically Detected Extended X‐Ray Absorption Fine Structure Study of InGaN/GaN Single Quantum Wells
Rigopoulos N, Hamilton B, Davies GJ, Towlson BM, Poolton NRJ, Dawson P, Graham DM, Kappers MJ, Humphreys CJ and Carlson S
AIP Conference Proceedings. vol. 893 (1), 1503-1504.  
10-04-2007

Optical Studies of Non‐linear Absorption in Single InGaN/GaN Quantum Dots
Jarjour AF, Taylor RA, Martin RW, Watson IM, Oliver RA, Briggs GAD, Kappers MJ and Humphreys CJ
AIP Conference Proceedings. vol. 893 (1), 953-954.  
10-04-2007

High Photoluminescence Efficiency III‐Nitride Based Quantum Well Structures Emitting at 380 nm
Graham DM, Dawson P, Zhu D, Kappers MJ, McAleese C, Hylton NP, Chabrol GR and Humphreys CJ
AIP Conference Proceedings. vol. 893 (1), 347-348.  
10-04-2007

Materials challenges for devices based on single, self-assembled InGaN quantum dots
Oliver RA, Jarjour AF, Tahraoui A, Kappers MJ, Taylor RA and Humphreys CJ
Journal of Physics Conference Series. vol. 61 (1) 
01-04-2007

Role of gross well-width fluctuations in bright, green-emitting single InGaN∕GaN quantum well structures
van der Laak NK, Oliver RA, Kappers MJ and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 90 (12) 
19-03-2007

Anisotropic strain relaxation in a-plane GaN quantum dots
Founta S, Coraux J, Jalabert D, Bougerol C, Rol F, Mariette H, Renevier H, Daudin B, Oliver RA, Humphreys CJ, Noakes TCQ and Bailey P
Journal of Applied Physics, Aip Publishing vol. 101 (6) 
15-03-2007

Growth and characterisation of semi-polar (1l2¯2) InGaN/GaN MQW structures
Kappers MJ, Hollander JL, McAleese C, Johnston CF, Broom RF, Barnard JS, Vickers ME and Humphreys CJ
Journal of Crystal Growth. vol. 300 (1), 155-159.  
01-03-2007

Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers
Kappers MJ, Datta R, Oliver RA, Rayment FDG, Vickers ME and Humphreys CJ
Journal of Crystal Growth. vol. 300 (1), 70-74.  
01-03-2007

Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering
Galtrey MJ, Oliver RA, Kappers MJ, Humphreys CJ, Stokes DJ, Clifton PH and Cerezo A
Applied Physics Letters, Aip Publishing vol. 90 (6) 
05-02-2007

Compositional contrast in AlxGa1−xN/GaN heterostructures using scanning spreading resistance microscopy
Fraser IS, Oliver RA, Sumner J, McAleese C, Kappers MJ and Humphreys CJ
Applied Surface Science, Elsevier vol. 253 (8), 3937-3944.  
01-02-2007

High photoluminescence quantum efficiency InGaN multiple quantum well structures emitting at 380nm
Graham DM, Dawson P, Chabrol GR, Hylton NP, Zhu D, Kappers MJ, McAleese C and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 101 (3) 
01-02-2007

Growth of low dislocation density GaN using transition metal nitride masking layers
Moram MA, Kappers MJ, Barber ZH and Humphreys CJ
Journal of Crystal Growth. vol. 298, 268-271.  
01-01-2007

Optical and micro-structural properties of high photoluminescence efficiency InGaN/AlInGaN quantum well structures
Zhu D, Kappers MJ, McAleese C, Graham DM, Chabrol GR, Hylton NP, Dawson P, Thrush EJ and Humphreys CJ
Journal of Crystal Growth. vol. 298, 504-507.  
01-01-2007

High photoluminescence efficiency III-nitride based quantum well structures emitting at 380 nm High photoluminescence efficiency III-nitride based quantum well structures emitting at 380 nm
Graham DM, Dawson P, Zhu D, Kappers MJ, McAleese C, Hylton NP, Chabro GR and Humphreys CJ
PHYSICS OF SEMICONDUCTORS, PTS A AND B. vol. 893, 347-+.  
01-01-2007

The Effect of Surface States on Secondary Electron (SE) Dopant Contrast from Silicon p-n Junctions
Chee AKW, Rodenburg C and Humphreys CJ
Mrs Advances, Springer Nature vol. 1026 
01-01-2007

Study of defects in p-type layers in III-nitride laser diode structures grown by molecular beam epitaxy
Huixin X, Costa PMFJ, Kauer M, Smeeton TM, Hooper SE, Heffernan J and Humphreys CJ
Materials Research Society Symposium Proceedings. vol. 955, 46-52.  
01-12-2006

A method of accurately determining the positions of the edges of depletion regions in semiconductor junctions
Ong VKS, Kurniawan O, Moldovan G and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 100 (11) 
01-12-2006

Resonant excitation photoluminescence studies of InGaN∕GaN single quantum well structures
Graham DM, Dawson P, Godfrey MJ, Kappers MJ and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 89 (21) 
20-11-2006

Low-voltage cross-sectional EBIC for characterisation of GaN-based light emitting devices
Moldovan G, Kazemian P, Edwards PR, Ong VKS, Kurniawan O and Humphreys CJ
Ultramicroscopy, Elsevier vol. 107 (4-5), 382-389.  
07-11-2006

Imaging dislocation cores – the way forward
Spence⊥ JCH, Kolar HR, Hembree G, Humphreys CJ, Barnard J, Datta R, Koch C, Ross FM and Justo JF
The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 86 (29-31), 4781-4796.  
11-10-2006

Microstructure of epitaxial scandium nitride films grown on silicon
Moram MA, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ
Applied Surface Science, Elsevier vol. 252 (24), 8385-8387.  
01-10-2006

High resolution quantitative two-dimensional dopant mapping using energy-filtered secondary electron imaging
Kazemian P, Mentink SAM, Rodenburg C and Humphreys CJ
Journal of Applied Physics, Aip Publishing vol. 100 (5) 
01-09-2006

Quantitative secondary electron energy filtering in a scanning electron microscope and its applications
Kazemian P, Mentink SAM, Rodenburg C and Humphreys CJ
Ultramicroscopy, Elsevier vol. 107 (2-3), 140-150.  
26-07-2006

Young’s modulus, Poisson’s ratio, and residual stress and strain in (111)-oriented scandium nitride thin films on silicon
Moram MA, Barber ZH, Humphreys CJ, Joyce TB and Chalker PR
Journal of Applied Physics, Aip Publishing vol. 100 (2) 
15-07-2006

Insights into the origin of threading dislocations in GaN∕Al2O3 from atomic force microscopy
Oliver RA, Kappers MJ and Humphreys CJ
Applied Physics Letters, Aip Publishing vol. 89 (1) 
03-07-2006

Mechanisms of bending of threading dislocations in MOVPE‐grown GaN on (0001) sapphire
Datta R and Humphreys CJ
physica status solidi (c). vol. 3 (6), 1750-1753.  
01-06-2006

Three methods for the growth of InGaN nanostructures by MOVPE
Oliver RA, Kappers MJ, van der Laak NK and Humphreys CJ
physica status solidi (c). vol. 3 (6), 1552-1556.  
01-06-2006

Towards a better understanding of nano‐islands formed during atmospheric pressure MOVPE
van der Laak NK, Oliver RA, Barnard JS, Cherns PD, Kappers MJ and Humphreys CJ
physica status solidi (c). vol. 3 (6), 1544-1547.  
01-06-2006

Temperature current‐voltage characterisation of MOCVD grown InGaN/GaN MQW LEDs
Moldovan G, Phillips A, Thrush EJ and Humphreys CJ
physica status solidi (c). vol. 3 (6), 2145-2148.  
01-06-2006

The effect of Si on the growth mode of GaN
von Pezold J, Oliver RA, Kappers MJ, Bristowe PD and Humphreys CJ
physica status solidi (c). vol. 3 (6), 1570-1574.  
01-06-2006

The effect of a Mg‐doped GaN cap layer on the optical properties of InGaN/AlGaN multiple quantum well structures
Graham DM, Dawson P, Zhang Y, Costa PMFJ, Kappers MJ, Humphreys CJ and Thrush EJ
physica status solidi (c). vol. 3 (6), 2005-2008.  
01-06-2006

Resonant photoluminescence excitation studies of InGaN/GaN single quantum wells
Graham DM, Dawson P, Godfrey MJ, Kappers MJ, Barnard JS, Humphreys CJ and Thrush EJ
physica status solidi (c). vol. 3 (6), 2001-2004.  
01-06-2006

High quantum efficiency InGaN/GaN structures emitting at 540 nm
Graham DM, Dawson P, Godfrey MJ, Kappers MJ, Costa PMFJ, Vickers ME, Datta R, Humphreys CJ and Thrush EJ
physica status solidi (c). vol. 3 (6), 1970-1973.  
01-06-2006

Electric fields in AlGaN/GaN quantum well structures
McAleese C, Costa PMFJ, Graham DM, Xiu H, Barnard JS, Kappers MJ, Dawson P, Godfrey MJ and Humphreys CJ
physica status solidi (b). vol. 243 (7), 1551-1559.  
01-06-2006

Effects of KOH etching on the properties of Ga-polar n-GaN surfaces
Moldovan G, Roe MJ, Harrison I, Kappers M, Humphreys CJ and Brown PD
The Philosophical Magazine a Journal of Theoretical Experimental and Applied Physics, Taylor & Francis vol. 86 (16), 2315-2327.  
01-06-2006

Site-specific dopant profiling in a scanning electron microscope using focused ion beam prepared specimens
Kazemian P, Twitchett AC, Humphreys CJ and Rodenburg C
Applied Physics Letters, Aip Publishing vol. 88 (21) 
22-05-2006

A TEM investigation of crack reduction in AlGaN/GaN heterostructures using an AlN interlayer
Cherns PD, McAleese C, Barnard JS, Kappers MJ and Humphreys CJ
Materials Research Society Symposium Proceedings. vol. 892, 697-702.  
15-05-2006

Microstructure and strain-free lattice parameters of ScxGa 1-xN films
Moram MA, Joyce TB, Chalker PR, Barber ZH and Humphreys CJ
Materials Research Society Symposium Proceedings. vol. 892, 723-727.  
15-05-2006

Quantum well network structures: Investigating long-range thickness fluctuations in single InGaN/GaN quantum wells
Van Der Laak NK, Oliver RA, Kappers MJ and Humphreys CJ
Materials Research Society Symposium Proceedings. vol. 892, 831-836.  
15-05-2006

The mean inner potential of GaN measured from nanowires using off-axis electron holography
Wong ASW, Ho GW, Dunin-Borkowski R, Kasama T, Oliver RA, Costa PMFJ and Humphreys CJ
Materials Research Society Symposium Proceedings. vol. 892, 209-214.  
15-05-2006

Misfit dislocations in green-emitting InGaN/GaN quantum well structures
Costa PMFJ, Datta R, Kappers MJ, Vickers ME and Humphreys CJ
Materials Research Society Symposium Proceedings. vol. 892, 639-643.  
15-05-2006

SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocations
Oliver RA, Kappers MJ, Sumner J, Datta R and Humphreys CJ
Materials Research Society Symposium Proceedings. vol. 892, 631-636.  
15-05-2006

Progress in MOVPE growth of crack‐free AlGaN based Bragg reflectors on Si(111)
Charles MB, Zhang Y, Kappers MJ and Humphreys CJ
physica status solidi (a) – applications and materials science. vol. 203 (7), 1618-1621.  
01-05-2006